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机构 日期 题名 作者
國立交通大學 2014-12-08T15:18:31Z A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel Lin, HC; Lee, MH; Su, CJ; Huang, TY; Lee, CC; Yang, YS
國立交通大學 2014-12-08T15:18:31Z Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs Lin, HN; Chen, HW; Ko, CH; Ge, CH; Lin, HC; Huang, TY; Lee, WC
國立交通大學 2014-12-08T15:18:06Z Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO(2) gate stacks by post deposition N(2)O plasma treatment Lu, WT; Chien, CH; Lan, WT; Lee, TC; Yang, MJ; Shen, SW; Lehnen, P; Huang, TY
國立交通大學 2014-12-08T15:18:02Z Improved SPM tolerance and cost-effective phase-modulation duobinary transmission over 230-km standard single-mode fiber using a single Mach-Zehnder modulator Lu, YC; Chen, J; Feng, KM; Yeh, PC; Huang, TY; Peng, WR; Huang, MF; Wei, CC
國立交通大學 2014-12-08T15:17:35Z Impacts of uniaxial compressive strain on dynamic negative bias temperature instability of p-channel MOSFETs Lu, CY; Lin, HC; Huang, TY
國立交通大學 2014-12-08T15:17:20Z Complementary carbon nanotube-gated carbon nanotube thin-film transistor Chen, BH; Lin, HC; Huang, TY; Wei, JH; Wang, HH; Tsai, MJ; Chao, TS
國立交通大學 2014-12-08T15:17:19Z Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics Lee, YJ; Ho, PT; Yang, WL; Chao, TS; Huang, TY
國立交通大學 2014-12-08T15:17:01Z Device characteristics and aggravated negative bias temperature instability in p-channel metal-oxide-semiconductor field-effect transistors with uniaxial compressive strain Lu, CY; Lin, HC; Chang, YF; Huang, TY
國立交通大學 2014-12-08T15:16:58Z Improved reliability of HfO2/SiON gate stack by fluorine incorporation Lu, WT; Chiein, CH; Lan, WT; Lee, TC; Lehnen, P; Huang, TY
國立交通大學 2014-12-08T15:16:17Z High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization Su, CJ; Lin, HC; Huang, TY

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