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机构 日期 题名 作者
國立交通大學 2014-12-08T15:45:15Z Improved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation Chen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS
國立交通大學 2014-12-08T15:45:10Z Dimensional effects on the drain current of n- and p-channel polycrystalline silicon thin film transistors Shih, PS; Zan, HW; Chang, TC; Huang, TY; Chang, CY
國立交通大學 2014-12-08T15:45:07Z Study of boron effects on the reaction of Co and Si1-xGex at various temperatures Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chang, TC; Chen, LP; Huang, GW
國立交通大學 2014-12-08T15:45:05Z Plasma-induced charging damage in ultrathin (3-nm) gate oxides Chen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY; Chao, TS
國立交通大學 2014-12-08T15:44:57Z Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, TY; Liang, MS
國立交通大學 2014-12-08T15:44:56Z Study on Ge/Si ratio, silicidation, and strain relaxation of high temperature sputtered Co/Si1-xGex structures Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW
國立交通大學 2014-12-08T15:44:54Z Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si1-xGex source/drain Huang, HJ; Chen, KM; Chang, CY; Chen, LP; Huang, GW; Huang, TY
國立交通大學 2014-12-08T15:44:54Z An anomalous crossover in Vth roll-off for indium-doped nMOSFETs Chang, SJ; Chang, CY; Chen, CM; Chou, JW; Chao, TS; Huang, TY
國立交通大學 2014-12-08T15:44:51Z Reduced reverse narrow channel effect in thin SOI nMOSFETs Chang, CY; Chang, SJ; Chao, TS; Wu, SD; Huang, TY
國立交通大學 2014-12-08T15:44:47Z Characterization and reliability of lightly-doped-drain polysilicon thin-film transistors with oxide sidewall spacer formed by one-step selective liquid phase deposition Shih, PS; Chang, TC; Huang, TY; Yeh, CF; Chang, CY

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