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"huang ty"的相關文件
顯示項目 86-135 / 206 (共5頁)
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| 國立交通大學 |
2014-12-08T15:42:20Z |
Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor
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Lin, HC; Wang, MF; Hou, FJ; Liu, JT; Huang, TY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:17Z |
Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors
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Peng, DZ; Chang, TC; Zan, HW; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:42:09Z |
The extraction of MOSFET gate capacitance from S-parameter measurements
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Su, JG; Wong, SC; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:42:06Z |
Self-aligned fabrication of thin-film transistors with field-induced drain
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Yu, CM; Lin, HC; Lin, CY; Yeh, KL; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:41:57Z |
Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique
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Hung, CC; Lin, HC; Wang, MF; Huang, TY; Shih, HC |
| 國立交通大學 |
2014-12-08T15:41:52Z |
Breakdown modes and their evolution in ultrathin gate oxide
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Lin, HC; Lee, DY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
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Huang, CH; Tseng, TY; Chien, CH; Yang, MJ; Leu, CC; Chang, TC; Liu, PT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:38Z |
Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain
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Peng, DZ; Chang, TC; Shih, PS; Zan, HW; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:41:27Z |
Analysis of narrow width effects in polycrystalline silicon thin film transistors
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Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:41:22Z |
Room temperature two-terminal characteristics in silicon nanowires
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Hu, SF; Wong, WZ; Liu, SS; Wu, YC; Sung, CL; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:22Z |
Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors
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Lin, HC; Wang, MF; Lu, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:20Z |
High-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions
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Lin, HC; Wang, MF; Hou, FJ; Lin, HN; Lu, CY; Liu, JT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:10Z |
Fabrication and characterization of Schottky barrier polysilicon thin-film transistors with excimer-laser crystallized channel
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Yeh, KL; Lin, HC; Tsai, RW; Lee, MH; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:09Z |
Structure and thermal stability of MOCVD ZrO2 films on Si (100)
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Wu, X; Landheer, D; Graham, MJ; Chen, HW; Huang, TY; Chao, TS |
| 國立交通大學 |
2014-12-08T15:41:01Z |
Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxide
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Perng, TH; Chien, CH; Chen, CW; Lin, HC; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:40:56Z |
Low-pressure crystallization of sol-gel-derived PbZr0.52Ti0.48O3 thin films at low temperature for low-voltage operation
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Wang, DY; Chien, CH; Chang, CY; Leu, CC; Yang, JY; Chuang, SH; Huang, TY |
| 國立交通大學 |
2014-12-08T15:40:41Z |
Ultrathin zirconium silicate films deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2), Si(O(t)-Bu)(2)(thd)(2), and nitric oxide
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Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Kim, JK; Lennard, WN; Chao, TS |
| 國立交通大學 |
2014-12-08T15:40:35Z |
A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain
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Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:40:27Z |
High resolution x-ray micromachining using SU-8 resist
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Shew, BY; Hung, JT; Huang, TY; Liu, KP; Chou, CP |
| 國立交通大學 |
2014-12-08T15:40:23Z |
High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory
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Chien, CH; Wang, DY; Yang, MJ; Lehnen, P; Leu, CC; Chuang, SH; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:40:21Z |
The effects of dielectric type and thickness on the characteristics of dynamic threshold metal oxide semiconductor transistors
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Lee, YJ; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:40:05Z |
H-2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions
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Yu, CM; Lin, HC; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:39:55Z |
Short-channel poly-Si thin-film transistors with ultrathin channel and self-aligned tungsten-clad source/drain
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Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:39:42Z |
Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETs
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Lee, DY; Huang, TY; Lin, HC; Chiang, WJ; Huang, GW; Wanga, T |
| 國立交通大學 |
2014-12-08T15:39:39Z |
High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts
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Chao, TS; Lee, YJ; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:33Z |
Oxygen quenching effect in ultra-deep X-ray lithography with SU-8 resist
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Shew, BY; Huang, TY; Liu, KP; Chou, CP |
| 國立交通大學 |
2014-12-08T15:39:32Z |
A dual-gate-controlled single-electron transistor using self-aligned polysilicon sidewall spacer gates on silicon-on-insulator nanowire
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Hu, SF; Wu, YC; Sung, CL; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:25Z |
Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistors
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Chao, TS; Lee, YJ; Huang, CY; Lin, HC; Li, YM; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:17Z |
A new method to extract MOSFET threshold voltage, effective channel length, and channel mobility using S-parameter measurement
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Chen, HY; Chen, KM; Huang, GW; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:11Z |
Pooling spaces and non-adaptive pooling designs
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Huang, TY; Weng, CW |
| 國立交通大學 |
2014-12-08T15:39:08Z |
Hot-carrier effects on power characteristics of SiGeHBTs
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Huang, SY; Chen, KM; Huang, GW; Tseng, HC; Hsu, TL; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:37:26Z |
The characteristics of hole trapping in HfO2/SiO2 gate dielectrics with TiN gate electrode
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Lu, WT; Lin, PC; Huang, TY; Chien, CH; Yang, MJ; Huang, IJ; Lehnen, P |
| 國立交通大學 |
2014-12-08T15:37:15Z |
HfO2 MIS capacitor with copper gate electrode
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Perng, TH; Chien, CH; Chen, CW; Yang, MJ; Lehnen, P; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:37:09Z |
Effects of low-temperature NH3 treatment on the characteristics of HfO2/SiO2 gate stack
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Lu, WT; Chien, CH; Huang, IJ; Yang, MJ; Lehnen, P; Huang, TY |
| 國立交通大學 |
2014-12-08T15:37:08Z |
Automated information. mining on multimedia TV news archives
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Lai, PS; Cheng, SS; Sun, SY; Huang, TY; Su, JM; Xu, YY; Chen, YH; Chuang, SC; Tseng, CL; Hsieh, CL; Lu, YL; Shen, YC; Chen, JR; Niel, JB; Tsai, FP; Huang, HC; Pao, HT; Fu, HC |
| 國立交通大學 |
2014-12-08T15:37:06Z |
Determination of effective density-of-states using a novel Schottky barrier poly-Si thin-film transistor
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Lin, HC; Lee, MH; Yeh, KL; Huang, TY |
| 國立交通大學 |
2014-12-08T15:37:06Z |
Localized lateral growth of single-walled carbon nanotubes for field-effect transistors by a cobalt-mix-TEOS method
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Chen, BH; Lo, PY; Wei, JH; Tsai, MJ; Hwang, CL; Chao, TS; Lin, HC; Huang, TY |
| 國立交通大學 |
2014-12-08T15:37:00Z |
Estimating driving performance based on EEG spectrum analysis
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Lin, CT; Wu, RC; Jung, TP; Liang, SF; Huang, TY |
| 國立交通大學 |
2014-12-08T15:36:15Z |
Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs
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Sheu, YM; Yang, SJ; Wang, CC; Chang, CS; Huang, LP; Huang, TY; Chen, MJ; Diaz, CH |
| 國立交通大學 |
2014-12-08T15:36:00Z |
Low-temperature growth of polycrystalline ge films on SiO2 substrate by HDPCVD
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Yang, MJ; Shieh, J; Hsu, SL; Huang, IJ; Leu, CC; Shen, SW; Huang, TY; Lehnen, P; Chien, CH |
| 國立交通大學 |
2014-12-08T15:27:25Z |
A model for photoresist-induced charging damage in ultra-thin gate oxides
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Lin, HC; Chien, CH; Wang, MF; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:27:09Z |
Breakdown characteristics of ultra-thin gate oxides caused by plasma charging
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Chen, CC; Lin, HC; Chang, CY; Chien, CH; Huang, TY |
| 國立交通大學 |
2014-12-08T15:27:08Z |
Characterization and lithographic parameters extraction for the modified resists
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Ko, FH; Lu, JK; Chu, TC; Huang, TY; Yang, CC; Sheu, JT; Huang, HL |
| 國立交通大學 |
2014-12-08T15:27:07Z |
New insights on RF CMOS stability related to bias, scaling, and temperature
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Su, JG; Wong, SC; Chang, CY; Chiu, KY; Huang, TY; Ou, CT; Kao, CH; Chao, CJ |
| 國立交通大學 |
2014-12-08T15:27:02Z |
Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide
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Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, SC; Wu, WF; Huang, TY; Liang, MS |
| 國立交通大學 |
2014-12-08T15:27:02Z |
Improved plasma charging immunity in ultra-thin gate oxide with fluorine and nitrogen implantation
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Chen, CC; Lin, HC; Chang, CY; Huang, CC; Chien, CH; Huang, TY; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:58Z |
Characterization and modeling of out-diffusion of cesium, manganese and zinc impurities from deep ultraviolet photoresist
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Ko, FH; Wang, MY; Wang, TK; Yang, CC; Huang, TY; Wu, CS |
| 國立交通大學 |
2014-12-08T15:26:56Z |
Film characterization and evaluation of process performance for the modified electron beam resist
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Ko, FH; Ting, JH; Chou, CT; Hsiao, LT; Huang, TY; Dai, BT |
| 國立交通大學 |
2014-12-08T15:26:54Z |
Thermal stability of PVD TiN gate and its impacts on characteristics of CMOS transistors
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Wang, MF; Kao, YC; Huang, TY; Lin, HC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:26:48Z |
Investigations of bulk dynamic threshold-voltage MOSFET with 65GHz "normal-mode" Ft and 220GHz "over-drive mode" Ft for RF applications
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Chang, CY; Su, JG; Hsu, HM; Wong, SC; Huang, TY; Sun, YC |
顯示項目 86-135 / 206 (共5頁)
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