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"huang ty"
Showing items 106-115 of 206 (21 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:40:21Z |
The effects of dielectric type and thickness on the characteristics of dynamic threshold metal oxide semiconductor transistors
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Lee, YJ; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:40:05Z |
H-2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions
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Yu, CM; Lin, HC; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:39:55Z |
Short-channel poly-Si thin-film transistors with ultrathin channel and self-aligned tungsten-clad source/drain
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Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:39:42Z |
Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETs
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Lee, DY; Huang, TY; Lin, HC; Chiang, WJ; Huang, GW; Wanga, T |
| 國立交通大學 |
2014-12-08T15:39:39Z |
High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts
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Chao, TS; Lee, YJ; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:33Z |
Oxygen quenching effect in ultra-deep X-ray lithography with SU-8 resist
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Shew, BY; Huang, TY; Liu, KP; Chou, CP |
| 國立交通大學 |
2014-12-08T15:39:32Z |
A dual-gate-controlled single-electron transistor using self-aligned polysilicon sidewall spacer gates on silicon-on-insulator nanowire
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Hu, SF; Wu, YC; Sung, CL; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:25Z |
Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistors
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Chao, TS; Lee, YJ; Huang, CY; Lin, HC; Li, YM; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:17Z |
A new method to extract MOSFET threshold voltage, effective channel length, and channel mobility using S-parameter measurement
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Chen, HY; Chen, KM; Huang, GW; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:11Z |
Pooling spaces and non-adaptive pooling designs
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Huang, TY; Weng, CW |
Showing items 106-115 of 206 (21 Page(s) Totally)
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