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Showing items 51-100 of 206 (5 Page(s) Totally)
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Institution	Date	Title	Author
國立交通大學	2014-12-08T15:45:15Z	Improved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation	Chen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS
國立交通大學	2014-12-08T15:45:10Z	Dimensional effects on the drain current of n- and p-channel polycrystalline silicon thin film transistors	Shih, PS; Zan, HW; Chang, TC; Huang, TY; Chang, CY
國立交通大學	2014-12-08T15:45:07Z	Study of boron effects on the reaction of Co and Si1-xGex at various temperatures	Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chang, TC; Chen, LP; Huang, GW
國立交通大學	2014-12-08T15:45:05Z	Plasma-induced charging damage in ultrathin (3-nm) gate oxides	Chen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY; Chao, TS
國立交通大學	2014-12-08T15:44:57Z	Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides	Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, TY; Liang, MS
國立交通大學	2014-12-08T15:44:56Z	Study on Ge/Si ratio, silicidation, and strain relaxation of high temperature sputtered Co/Si1-xGex structures	Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW
國立交通大學	2014-12-08T15:44:54Z	Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si1-xGex source/drain	Huang, HJ; Chen, KM; Chang, CY; Chen, LP; Huang, GW; Huang, TY
國立交通大學	2014-12-08T15:44:54Z	An anomalous crossover in Vth roll-off for indium-doped nMOSFETs	Chang, SJ; Chang, CY; Chen, CM; Chou, JW; Chao, TS; Huang, TY
國立交通大學	2014-12-08T15:44:51Z	Reduced reverse narrow channel effect in thin SOI nMOSFETs	Chang, CY; Chang, SJ; Chao, TS; Wu, SD; Huang, TY
國立交通大學	2014-12-08T15:44:47Z	Characterization and reliability of lightly-doped-drain polysilicon thin-film transistors with oxide sidewall spacer formed by one-step selective liquid phase deposition	Shih, PS; Chang, TC; Huang, TY; Yeh, CF; Chang, CY
國立交通大學	2014-12-08T15:44:45Z	The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector	Horng, GJ; Chang, CY; Ho, C; Lee, CY; Huang, TY
國立交通大學	2014-12-08T15:44:34Z	Improved electrical properties of shallow p(+)-n junction using selectively grown graded Si1-xGex epitaxial structure	Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW
國立交通大學	2014-12-08T15:44:33Z	High-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channel	Chang, SJ; Chang, CY; Chen, CM; Chao, TS; Lee, YJ; Huang, TY
國立交通大學	2014-12-08T15:44:25Z	The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor	Chen, CM; Chang, SJ; Chou, JW; Lin, T; Yeh, WK; Chang, CY; Luo, WZ; Lee, YJ; Chao, TS; Huang, TY
國立交通大學	2014-12-08T15:44:20Z	A novel thin-film transistor with self-aligned field induced drain	Lin, HC; Yu, CM; Lin, CY; Yeh, KL; Huang, TY; Lei, TF
國立交通大學	2014-12-08T15:44:10Z	Electrical and compositional properties of co-silicided shallow p(+)-n junction using Si-capped/boron-doped Si1-xGex layer deposited by UHVCME	Huang, HJ; Chen, KM; Chang, CY; Huang, TY
國立交通大學	2014-12-08T15:44:07Z	The reaction of Co and Si1-xGex for MOSFET with poly-Si1-xGex gate	Chen, KM; Huang, HJ; Chang, CY; Huang, TY; Huang, GW; Chen, LP
國立交通大學	2014-12-08T15:43:58Z	Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension	Lin, HC; Yeh, KL; Huang, RG; Lin, CY; Huang, TY
國立交通大學	2014-12-08T15:43:51Z	Electrical properties of shallow p(+)-n junction using boron-doped Si1-xGex layer deposited by ultrahigh vacuum chemical molecular epitaxy	Huang, HJ; Chen, KM; Chang, CY; Chao, TS; Huang, TY
國立交通大學	2014-12-08T15:43:41Z	Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide	Tsai, MY; Lin, HC; Lee, DY; Huang, TY
國立交通大學	2014-12-08T15:43:40Z	X-ray photoelectron spectroscopy of gate-quality silicon oxynitride films produced by annealing plasma-nitrided Si(100) in nitrous oxide	Chen, HW; Landheer, D; Chao, TS; Hulse, JE; Huang, TY
國立交通大學	2014-12-08T15:43:37Z	Conduction mechanisms for off-state leakage current of Schottky barrier thin-film transistors	Yeh, KL; Lin, HC; Huang, RG; Tsai, RW; Huang, TY
國立交通大學	2014-12-08T15:43:36Z	Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drain	Huang, HJ; Chen, KM; Huang, TY; Chao, TS; Huang, GW; Chien, CH; Chang, CY
國立交通大學	2014-12-08T15:43:27Z	Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering	Pan, TM; Chien, CH; Lei, TF; Chao, TS; Huang, TY
國立交通大學	2014-12-08T15:43:22Z	Improving the RF performance of 0.18 mu m CMOS with deep n-well implantation	Su, JG; Hsu, HM; Wong, SC; Chang, CY; Huang, TY; Sun, JYC
國立交通大學	2014-12-08T15:43:09Z	The effects of low-pressure rapid thermal post-annealing on the properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical deposition	Yang, MJ; Chien, CH; Leu, CC; Zhang, RJ; Wu, SC; Huang, TY; Tseng, TY
國立交通大學	2014-12-08T15:42:51Z	Impact of thermal stability on the characteristics of complementary metal oxide semiconductor transistors with TiN metal gate	Wang, MF; Huang, TY; Kao, YC; Lin, HC; Chang, CY
國立交通大學	2014-12-08T15:42:48Z	Ambipolar Schottky-barrier TFTs	Lin, HC; Yeh, KL; Huang, TY; Huang, RG; Sze, SM
國立交通大學	2014-12-08T15:42:37Z	Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage	Lee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH
國立交通大學	2014-12-08T15:42:37Z	Reduction of off-state leakage current in Schottky barrier thin-film transistors (SBTFT) by a field-induced drain	Yeh, KL; Lin, HC; Huang, RG; Tsai, RW; Huang, TY
國立交通大學	2014-12-08T15:42:33Z	RF CMOS technology for MMIC	Chang, CY; Su, JG; Wong, SC; Huang, TY; Sun, YC
國立交通大學	2014-12-08T15:42:26Z	Characterization of thin ZrO2 films deposited using Zr(O '-Pr)(2)(thd)(2) and O-2 on Si(100)	Chen, HW; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS; Huang, TY
國立交通大學	2014-12-08T15:42:25Z	Characteristics of polycrystalline silicon thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate	Yu, M; Lin, HC; Chen, GH; Huang, TY; Lei, TF
國立交通大學	2014-12-08T15:42:23Z	A silicon nanowire with a Coulomb blockade effect at room temperature	Hu, SF; Wong, WZ; Liu, SS; Wu, YC; Sung, CL; Huang, TY; Yang, TJ
國立交通大學	2014-12-08T15:42:21Z	Physical and electrical characterization of ZrO(2) gate insulators deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2) and O(2)	Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS
國立交通大學	2014-12-08T15:42:20Z	Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor	Lin, HC; Wang, MF; Hou, FJ; Liu, JT; Huang, TY; Sze, SM
國立交通大學	2014-12-08T15:42:17Z	Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors	Peng, DZ; Chang, TC; Zan, HW; Huang, TY; Chang, CY; Liu, PT
國立交通大學	2014-12-08T15:42:09Z	The extraction of MOSFET gate capacitance from S-parameter measurements	Su, JG; Wong, SC; Chang, CY; Huang, TY
國立交通大學	2014-12-08T15:42:06Z	Self-aligned fabrication of thin-film transistors with field-induced drain	Yu, CM; Lin, HC; Lin, CY; Yeh, KL; Huang, TY; Lei, TF
國立交通大學	2014-12-08T15:41:57Z	Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique	Hung, CC; Lin, HC; Wang, MF; Huang, TY; Shih, HC
國立交通大學	2014-12-08T15:41:52Z	Breakdown modes and their evolution in ultrathin gate oxide	Lin, HC; Lee, DY; Huang, TY
國立交通大學	2014-12-08T15:41:39Z	Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer	Huang, CH; Tseng, TY; Chien, CH; Yang, MJ; Leu, CC; Chang, TC; Liu, PT; Huang, TY
國立交通大學	2014-12-08T15:41:38Z	Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain	Peng, DZ; Chang, TC; Shih, PS; Zan, HW; Huang, TY; Chang, CY; Liu, PT
國立交通大學	2014-12-08T15:41:27Z	Analysis of narrow width effects in polycrystalline silicon thin film transistors	Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Huang, TY; Chang, CY
國立交通大學	2014-12-08T15:41:22Z	Room temperature two-terminal characteristics in silicon nanowires	Hu, SF; Wong, WZ; Liu, SS; Wu, YC; Sung, CL; Huang, TY
國立交通大學	2014-12-08T15:41:22Z	Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors	Lin, HC; Wang, MF; Lu, CY; Huang, TY
國立交通大學	2014-12-08T15:41:20Z	High-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions	Lin, HC; Wang, MF; Hou, FJ; Lin, HN; Lu, CY; Liu, JT; Huang, TY
國立交通大學	2014-12-08T15:41:10Z	Fabrication and characterization of Schottky barrier polysilicon thin-film transistors with excimer-laser crystallized channel	Yeh, KL; Lin, HC; Tsai, RW; Lee, MH; Huang, TY
國立交通大學	2014-12-08T15:41:09Z	Structure and thermal stability of MOCVD ZrO2 films on Si (100)	Wu, X; Landheer, D; Graham, MJ; Chen, HW; Huang, TY; Chao, TS
國立交通大學	2014-12-08T15:41:01Z	Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxide	Perng, TH; Chien, CH; Chen, CW; Lin, HC; Chang, CY; Huang, TY

Showing items 51-100 of 206 (5 Page(s) Totally)
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