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Showing items 71-80 of 206  (21 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:43:40Z X-ray photoelectron spectroscopy of gate-quality silicon oxynitride films produced by annealing plasma-nitrided Si(100) in nitrous oxide Chen, HW; Landheer, D; Chao, TS; Hulse, JE; Huang, TY
國立交通大學 2014-12-08T15:43:37Z Conduction mechanisms for off-state leakage current of Schottky barrier thin-film transistors Yeh, KL; Lin, HC; Huang, RG; Tsai, RW; Huang, TY
國立交通大學 2014-12-08T15:43:36Z Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drain Huang, HJ; Chen, KM; Huang, TY; Chao, TS; Huang, GW; Chien, CH; Chang, CY
國立交通大學 2014-12-08T15:43:27Z Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering Pan, TM; Chien, CH; Lei, TF; Chao, TS; Huang, TY
國立交通大學 2014-12-08T15:43:22Z Improving the RF performance of 0.18 mu m CMOS with deep n-well implantation Su, JG; Hsu, HM; Wong, SC; Chang, CY; Huang, TY; Sun, JYC
國立交通大學 2014-12-08T15:43:09Z The effects of low-pressure rapid thermal post-annealing on the properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical deposition Yang, MJ; Chien, CH; Leu, CC; Zhang, RJ; Wu, SC; Huang, TY; Tseng, TY
國立交通大學 2014-12-08T15:42:51Z Impact of thermal stability on the characteristics of complementary metal oxide semiconductor transistors with TiN metal gate Wang, MF; Huang, TY; Kao, YC; Lin, HC; Chang, CY
國立交通大學 2014-12-08T15:42:48Z Ambipolar Schottky-barrier TFTs Lin, HC; Yeh, KL; Huang, TY; Huang, RG; Sze, SM
國立交通大學 2014-12-08T15:42:37Z Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage Lee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH
國立交通大學 2014-12-08T15:42:37Z Reduction of off-state leakage current in Schottky barrier thin-film transistors (SBTFT) by a field-induced drain Yeh, KL; Lin, HC; Huang, RG; Tsai, RW; Huang, TY

Showing items 71-80 of 206  (21 Page(s) Totally)
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