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Showing items 76-85 of 206  (21 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:43:09Z The effects of low-pressure rapid thermal post-annealing on the properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical deposition Yang, MJ; Chien, CH; Leu, CC; Zhang, RJ; Wu, SC; Huang, TY; Tseng, TY
國立交通大學 2014-12-08T15:42:51Z Impact of thermal stability on the characteristics of complementary metal oxide semiconductor transistors with TiN metal gate Wang, MF; Huang, TY; Kao, YC; Lin, HC; Chang, CY
國立交通大學 2014-12-08T15:42:48Z Ambipolar Schottky-barrier TFTs Lin, HC; Yeh, KL; Huang, TY; Huang, RG; Sze, SM
國立交通大學 2014-12-08T15:42:37Z Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage Lee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH
國立交通大學 2014-12-08T15:42:37Z Reduction of off-state leakage current in Schottky barrier thin-film transistors (SBTFT) by a field-induced drain Yeh, KL; Lin, HC; Huang, RG; Tsai, RW; Huang, TY
國立交通大學 2014-12-08T15:42:33Z RF CMOS technology for MMIC Chang, CY; Su, JG; Wong, SC; Huang, TY; Sun, YC
國立交通大學 2014-12-08T15:42:26Z Characterization of thin ZrO2 films deposited using Zr(O '-Pr)(2)(thd)(2) and O-2 on Si(100) Chen, HW; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS; Huang, TY
國立交通大學 2014-12-08T15:42:25Z Characteristics of polycrystalline silicon thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate Yu, M; Lin, HC; Chen, GH; Huang, TY; Lei, TF
國立交通大學 2014-12-08T15:42:23Z A silicon nanowire with a Coulomb blockade effect at room temperature Hu, SF; Wong, WZ; Liu, SS; Wu, YC; Sung, CL; Huang, TY; Yang, TJ
國立交通大學 2014-12-08T15:42:21Z Physical and electrical characterization of ZrO(2) gate insulators deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2) and O(2) Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS

Showing items 76-85 of 206  (21 Page(s) Totally)
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