|
|
???tair.name??? >
???browser.page.title.author???
|
"huang ty"???jsp.browse.items-by-author.description???
Showing items 76-100 of 210 (9 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 9 > >>
View [10|25|50] records per page
| 國立交通大學 |
2014-12-08T15:43:22Z |
Improving the RF performance of 0.18 mu m CMOS with deep n-well implantation
|
Su, JG; Hsu, HM; Wong, SC; Chang, CY; Huang, TY; Sun, JYC |
| 國立交通大學 |
2014-12-08T15:43:09Z |
The effects of low-pressure rapid thermal post-annealing on the properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical deposition
|
Yang, MJ; Chien, CH; Leu, CC; Zhang, RJ; Wu, SC; Huang, TY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:42:51Z |
Impact of thermal stability on the characteristics of complementary metal oxide semiconductor transistors with TiN metal gate
|
Wang, MF; Huang, TY; Kao, YC; Lin, HC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:42:48Z |
Ambipolar Schottky-barrier TFTs
|
Lin, HC; Yeh, KL; Huang, TY; Huang, RG; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:37Z |
Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage
|
Lee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH |
| 國立交通大學 |
2014-12-08T15:42:37Z |
Reduction of off-state leakage current in Schottky barrier thin-film transistors (SBTFT) by a field-induced drain
|
Yeh, KL; Lin, HC; Huang, RG; Tsai, RW; Huang, TY |
| 國立交通大學 |
2014-12-08T15:42:33Z |
RF CMOS technology for MMIC
|
Chang, CY; Su, JG; Wong, SC; Huang, TY; Sun, YC |
| 國立交通大學 |
2014-12-08T15:42:26Z |
Characterization of thin ZrO2 films deposited using Zr(O '-Pr)(2)(thd)(2) and O-2 on Si(100)
|
Chen, HW; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:42:25Z |
Characteristics of polycrystalline silicon thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate
|
Yu, M; Lin, HC; Chen, GH; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:42:23Z |
A silicon nanowire with a Coulomb blockade effect at room temperature
|
Hu, SF; Wong, WZ; Liu, SS; Wu, YC; Sung, CL; Huang, TY; Yang, TJ |
| 國立交通大學 |
2014-12-08T15:42:21Z |
Physical and electrical characterization of ZrO(2) gate insulators deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2) and O(2)
|
Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS |
| 國立交通大學 |
2014-12-08T15:42:20Z |
Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor
|
Lin, HC; Wang, MF; Hou, FJ; Liu, JT; Huang, TY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:17Z |
Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors
|
Peng, DZ; Chang, TC; Zan, HW; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:42:09Z |
The extraction of MOSFET gate capacitance from S-parameter measurements
|
Su, JG; Wong, SC; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:42:06Z |
Self-aligned fabrication of thin-film transistors with field-induced drain
|
Yu, CM; Lin, HC; Lin, CY; Yeh, KL; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:41:57Z |
Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique
|
Hung, CC; Lin, HC; Wang, MF; Huang, TY; Shih, HC |
| 國立交通大學 |
2014-12-08T15:41:52Z |
Breakdown modes and their evolution in ultrathin gate oxide
|
Lin, HC; Lee, DY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
|
Huang, CH; Tseng, TY; Chien, CH; Yang, MJ; Leu, CC; Chang, TC; Liu, PT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:38Z |
Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain
|
Peng, DZ; Chang, TC; Shih, PS; Zan, HW; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:41:27Z |
Analysis of narrow width effects in polycrystalline silicon thin film transistors
|
Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:41:22Z |
Room temperature two-terminal characteristics in silicon nanowires
|
Hu, SF; Wong, WZ; Liu, SS; Wu, YC; Sung, CL; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:22Z |
Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors
|
Lin, HC; Wang, MF; Lu, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:20Z |
High-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions
|
Lin, HC; Wang, MF; Hou, FJ; Lin, HN; Lu, CY; Liu, JT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:10Z |
Fabrication and characterization of Schottky barrier polysilicon thin-film transistors with excimer-laser crystallized channel
|
Yeh, KL; Lin, HC; Tsai, RW; Lee, MH; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:09Z |
Structure and thermal stability of MOCVD ZrO2 films on Si (100)
|
Wu, X; Landheer, D; Graham, MJ; Chen, HW; Huang, TY; Chao, TS |
Showing items 76-100 of 210 (9 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 9 > >>
View [10|25|50] records per page
|
