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Taiwan Academic Institutional Repository >
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"huang wei ching"
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| 國立交通大學 |
2018-01-24T07:42:54Z |
以金屬有機化學氣相沉積方式成長氮化鋁緩衝層應用於氮化鋁(銦)鎵/氮化鎵高電子遷率電晶體
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黃偉進; 張 翼; Huang, Wei-Ching |
| 國立交通大學 |
2017-04-21T06:55:49Z |
Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures
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Huang, Wei-Ching; Chu, Chung-Ming; Wong, Yuen Yee; Chen, Kai-Wei; Lin, Yen-Ku; Wu, Chia-Hsun; Lee, Wei-I; Chang, Edward-Yi |
| 國立交通大學 |
2017-04-21T06:55:41Z |
The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method
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Huang, Wei-Ching; Chu, Chung-Ming; Hsieh, Chi-Feng; Wong, Yuen-Yee; Chen, Kai-Wei; Lee, Wei-I; Tu, Yung-Yi; Chang, Edward-Yi; Dee, Chang Fu; Majlis, B. Y.; Yap, S. L. |
| 國立成功大學 |
2016-01 |
Glycogen Synthase Kinase-3 beta and Caspase-2 Mediate Ceramide- and Etoposide-Induced Apoptosis by Regulating the Lysosomal-Mitochondrial Axis
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Lin, Chiou-Feng; Tsai, Cheng-Chieh; Huang, Wei-Ching; Wang, Yu-Chih; Tseng, Po-Chun; Tsai, Tsung-Ting; Chen, Chia-Ling |
| 國立交通大學 |
2015-12-02T02:59:20Z |
Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors
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Huang, Wei-Ching; Liu, Kuan-Shin; Wong, Yuen-Yee; Hsieh, Chi-Feng; Chang, Edward-Yi; Hsu, Heng-Tung |
| 國立交通大學 |
2015-07-21T08:30:58Z |
The effects of Growth Parameters on the Electrical Properties in InAlN/AlN/GaN High-Electron-Mobility Transistors (HEMTs)
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Huang, Wei-Ching; Wong, Yuen-Yee; Liu, Kuan-Shin; Hsieh, Chi-Feng; Chang, Edward Yi |
| 國立交通大學 |
2015-07-21T08:30:57Z |
Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD
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Lumbantoruan, Franky; Wong, Yuan-Yee; Wu, Yue-Han; Huang, Wei-Ching; Shrestra, Niraj Man; Luong, Tung Tien; Tran Binh Tinh; Chang, Edward Yi |
| 國立交通大學 |
2014-12-12T01:36:14Z |
碳回地底：二氧化碳捕獲與封存技術(CCS)之未來發展與預測
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黃薇青; Huang, Wei-Ching; 袁建中; Benjamin J.C. Yuan |
| 國立交通大學 |
2014-12-08T15:45:15Z |
MOVPE high quality GaN film grown on Si (111) substrates using a multilayer AlN buffer
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Lin, Kung-Liang; Chang, Edward-Yi; Huang, Jui-Chien; Huang, Wei-Ching; Hsiao, Yu-Lin; Chiang, Chen-Hao; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng |
| 國立交通大學 |
2014-12-08T15:36:58Z |
Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors
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Wong, Yuen-Yee; Chang, Edward Yi; Huang, Wei-Ching; Lin, Yueh-Chin; Tu, Yung-Yi; Chen, Kai-Wei; Yu, Hung-Wei |
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