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Showing items 1-14 of 14 (1 Page(s) Totally)
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| 臺大學術典藏 |
2022-03-22T08:30:45Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
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Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:30:43Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
|
Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:43Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
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Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-09-02T00:04:18Z |
High On-State Current in Chemical Vapor Deposited Monolayer MoS2nFETs with Sn Ohmic Contacts
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Chou A.-S;Cheng C.-C;Liew S.-L;Ho P.-H;Wang S.-Y;Chang Y.-C;Chang C.-K;Su Y.-C;Huang Z.-D;Fu F.-Y;Hsu C.-F;Chung Y.-Y;Chang W.-H;Li L.-J;Wu C.-I.; Chou A.-S; CHIH-I WU et al. |
| 臺大學術典藏 |
2018-09-10T03:44:05Z |
Frequent gain of copy number on the long arm of chromosome 3 in human cervical adenocarcinoma
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Hsu, M.-T.; Wang,; Huang, Z.-D.; Lin, C.-H.; Chen, Y.-J.; Chang, M.-S.; Shyong, W.-Y.; Yang, Y.-C.; Chen, M.-L.; MAU-SUN CHANG |
| 國立成功大學 |
2013-06-03 |
Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga2O3/SiO2 dielectric
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Chang, T. H.; Chiu, C. J.; Chang, S. J.; Tsai, T. Y.; Yang, T. H.; Huang, Z. D.; Weng, W. Y. |
| 國立成功大學 |
2011-11 |
GaN Schottky barrier photodetectors with a lattice matched Al0.82In0.18N intermediate layer
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Huang, Z.-D.;Weng, W.-Y.;Chang, S.-J.;Jung, S.-C.;Chiu, C.-J.;Hsueh, T.-J.;Lai, W.-C.;Wu, S.-L. |
| 國立成功大學 |
2011-09 |
An (Al(x)Ga(1-x))(2)O(3) Metal-Semiconductor-Metal VUV Photodetector
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Weng, W. Y.; Hsueh, T. J.; Chang, S. J.; Hung, S. C.; Huang, G. J.; Hsueh, H. T.; Huang, Z. D.; Chiu, C. J. |
| 實踐大學 |
2011 |
GaN Schottky Barrier Photodetectors With a Lattice-Matched Al0.82In0.18N Intermediate Layer
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Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L. |
| 實踐大學 |
2011 |
GaN Schottky barrier photodetectors with a lattice-matched Al 0.82In0.18 intermediate layer
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Huang, Z.D.;Weng, W.Y.;Chang, S.J.;Hung, S.C.;Chiu, C.J.;Hsueh, T.J.;Lai, W.C.;Wu, S.L. |
| 實踐大學 |
2011 |
An (AlxGa1-x)(2)O-3 Metal-Semiconductor-Metal VUV Photodetector
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Weng, W.Y.;Hsueh, T.J.;Chang, S.J.;Hung, S.C.;Huang, G.J.;Hsueh, H.T.;Huang, Z.D.;Chiu, C.J. |
| 實踐大學 |
2011 |
An (AlxGa1-x)2O3 metal-semiconductor-metal VUV photodetector
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Weng, W.Y.;Hsueh, T.J.;Chang, S.J.;Hung, S.C.;Huang, G.J.;Hsueh, H.T.;Huang, Z.D.;Chiu, C.J. |
| 國立成功大學 |
2011 |
GaN MSM UV Photodetectors with an Al(0.82)In(0.18)N Intermediate Layer
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Huang, Z. D.; Weng, W. Y.; Chang, S. J.; Chiu, C. J.; Hsueh, T. J.; Lai, W. C.; Wu, S. L. |
| 國立成功大學 |
2011 |
GaN MSM UV photodetectors with an Al0.82In0.18N intermediate layer
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Huang, Z.-D.;Weng, W.-Y.;Chang, S.-J.;Chiu, C.-J.;Hsueh, T.-J.;Lai, W.-C.;Wu, S. L. |
Showing items 1-14 of 14 (1 Page(s) Totally)
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