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Institution Date Title Author
國立交通大學 2017-04-21T06:55:19Z Methods for Extracting Flat Band Voltage in the InGaAs High Mobility Materials Huy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Hu, Chenming; Lin, Yueh Chin; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:14Z Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor deposition Sa Hoang Huynh; Minh Thien Huu Ha; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Chang, Edward Yi
國立交通大學 2016-03-28T00:04:08Z Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack Huy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi
國立交通大學 2014-12-08T15:36:59Z Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin

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