| 國立交通大學 |
2014-12-08T15:40:40Z |
Discrete-Dopant-Fluctuated Transient Behavior and Variability Suppression in 16-nm-Gate Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
|
Li, Yiming; Hwang, Chih-Hong; Cheng, Hui-Wen |
| 國立交通大學 |
2014-12-08T15:28:22Z |
Temperature dependence on the contact size of GeSbTe films for phase change memories
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Li, Yiming; Yu, Shao-Ming; Hwang, Chih-Hong; Kuo, Yi-Ting |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Statistical Analysis of Metal Gate Workfunction Variability, Process Variation, and Random Dopant Fluctuation in Nano-CMOS Circuits
|
Hwang, Chih-Hong; Li, Tien-Yeh; Han, Ming-Hung; Lee, Kuo-Fu; Cheng, Hui-Wen; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:24:49Z |
Process-Variation- and Random-Dopant-Induced Static Noise Margin Fluctuation in Nanoscale CMOS and FinFET SRAM Cells
|
Li, Tien-Yeh; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:24:48Z |
Propagation Delay Dependence on Channel Fins and Geometry Aspect Ratio of 16-nm Multi-Gate MOSFET Inverter
|
Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:24:03Z |
Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect Ratio
|
Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:24:02Z |
Process- and Random-Dopant-Induced Characteristic Variability of SRAM with nano-CMOS and Bulk FinFET Devices
|
Li, Tien-Yeh; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:24:02Z |
Characteristics Variability of Novel Lateral Asymmetry Nano-MOSFETs due to Random Discrete Dopant
|
Lee, Kou-Fu; Hwang, Chih-Hong; Li, Tien-Yeh; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:23:44Z |
Effect of Flash Lamp Annealing and Laser Spike Annealing on Random Dopant Fluctuation of 15-nm Metal-Oxide-Semiconductor Devices
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Cheng, Hui-Wen; Hwang, Chih-Hong; Chao, Ko-An; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:22:31Z |
Effect of Process Variation on 15-nm-Gate Stacked Multichannel Surrounding-Gate Field Effect Transistor
|
Han, Ming-Hung; Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:18:51Z |
Large-Scale Atomistic Circuit-Device Coupled Simulation of Discrete-Dopant-Induced Characteristic Fluctuation in Nano-CMOS Digital Circuits
|
Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:17:22Z |
Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices
|
Li, Yiming; Hwang, Chih-Hong; Cheng, Hui-Wen |
| 國立交通大學 |
2014-12-08T15:15:13Z |
Discrete Dopant Induced Characteristic Fluctuations in 16nm Multiple-Gate SOI Devices
|
Li, Yiming; Hwang, Chih-Hong; Huang, Hsuan-Ming; Yeh, Ta-Ching |
| 國立交通大學 |
2014-12-08T15:13:32Z |
The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit
|
Han, Ming-Hung; Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:13:30Z |
Discrete Dopant Induced Electrical and Thermal Fluctuation in Nanoscale SOI FinFET
|
Li, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming |
| 國立交通大學 |
2014-12-08T15:13:29Z |
Effect of Single Grain Boundary Position on Surrounding-Gate Polysilicon Thin Film Transistors
|
Li, Yiming; Huang, Jung Y.; Lee, Bo-Shian; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:13:15Z |
Discrete-dopant-induced characteristic fluctuations in 16 nm multiple-gate silicon-on-insulator devices
|
Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:13:07Z |
Statistical variability in FinFET devices with intrinsic parameter fluctuations
|
Hwang, Chih-Hong; Li, Yiming; Han, Ming-Hung |
| 國立交通大學 |
2014-12-08T15:13:01Z |
Effect of fin angle on electrical characteristics of nanoscale round-top-gate bulk FinFETs
|
Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:11:11Z |
Numerical simulation of nanoscale multiple-gate devices including random impurity effect
|
Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:10:44Z |
UV Illumination Technique for Leakage Current Reduction in a-Si:H Thin-Film Transistors
|
Li, Yiming; Hwang, Chih-Hong; Chen, Chung-Le; Yan, Shuoting; Lou, Jen-Chung |
| 國立交通大學 |
2014-12-08T15:10:33Z |
High-Frequency Characteristic Fluctuations of Nano-MOSFET Circuit Induced by Random Dopants
|
Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:10:16Z |
Three-dimensional simulation of random-dopant-induced threshold voltage fluctuation in nanoscale Fin-typed field effect transistors
|
Li, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming |
| 國立交通大學 |
2014-12-08T15:09:42Z |
DC baseband and high-frequency characteristics of a silicon nanowire field effect transistor circuit
|
Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:09:31Z |
Discrete-Dopant-Induced Timing Fluctuation and Suppression in Nanoscale CMOS Circuit
|
Li, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh |
| 國立交通大學 |
2014-12-08T15:09:07Z |
The geometric effect and programming current reduction in cylindrical-shaped phase change memory
|
Li, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh; Cheng, Hui-Wen |
| 國立交通大學 |
2014-12-08T15:09:00Z |
Random-Dopant-Induced Variability in Nano-CMOS Devices and Digital Circuits
|
Li, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh |
| 國立交通大學 |
2014-12-08T15:08:49Z |
The effect of the geometry aspect ratio on the silicon ellipse-shaped surrounding-gate field-effect transistor and circuit
|
Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:08:40Z |
Doping profile and Ge-dose optimization for silicon-germanium heterojunction bipolar transistors
|
Li, Yiming; Chen, Ying-Chieh; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:08:33Z |
Characteristic fluctuation dependence on discrete dopant for 16nm SOI FinFETs at different temperature
|
Li, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming; Yeh, Ta-Ching; Cheng, Hui-Wen; Chen, Hung-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang |
| 國立交通大學 |
2014-12-08T15:07:40Z |
Discrete-Dopant-Induced Power-Delay Characteristic Fluctuation in 16 nm Complementary Metal-Oxide-Semiconductor with High Dielectric Constant Material
|
Han, Ming-Hung; Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:07:35Z |
Effect of UV illumination on inverted-staggered a-Si : H thin film transistors
|
Li, Yiming; Lou, Jen-Chung; Chen, Chung-Le; Hwang, Chih-Hong; Yan, Shuoting |
| 國立交通大學 |
2014-12-08T15:07:27Z |
Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies
|
Li, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh; Han, Ming-Hung |
| 國立交通大學 |
2014-12-08T15:07:15Z |
Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuations
|
Li, Yiming; Hwang, Chih-Hong; Han, Ming-Hung |
| 國立交通大學 |
2014-12-08T15:07:07Z |
Asymmetric gate capacitance and dynamic characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants
|
Lee, Kuo-Fu; Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:07:06Z |
Numerical simulation of static noise margin for a six-transistor static random access memory cell with 32nm fin-typed field effect transistors
|
Li, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming |
| 國立交通大學 |
2014-12-08T15:02:42Z |
Reduction of Discrete-Dopant-Induced High-Frequency Characteristic Fluctuations in Nanoscale CMOS Circuit
|
Li, Yiming; Hwang, Chih-Hong; Yeh, Ta-Ching; Huang, Hsuan-Ming; Li, Tien-Yeh; Cheng, Hui-Wen |
| 國立交通大學 |
2014-12-08T15:02:21Z |
Comprehensive Examination of Threshold Voltage Fluctuations in Nanoscale Planar MOSFET and Bulk FinFET Devices
|
Hwang, Chih-Hong; Cheng, Hui-Wen; Yeh, Ta-Ching; Li, Tien-Yeh; Huang, Hsuan-Ming; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:01:46Z |
Three-Dimensional Numerical Simulation of Switching Dynamics for Cylindrical-Shaped Phase Change Memory
|
Li, Yiming; Hwang, Chih-Hong; Kuo, Yi-Ting; Cheng, Hui-Wen |
