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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:49:39Z |
Electrical characteristic fluctuations in sub-45nm CMOS devices
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Yang, Fu-Liang; Hwang, Jiunn-Ren; Li, Yiming |
| 國立交通大學 |
2017-04-21T06:49:09Z |
Novel strained CMOS devices with STI stress buffer layers
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Chen, Hung-Ming; Hwang, Jiunn-Ren; Li, Yiming; Yang, Fu-Liang |
| 國立交通大學 |
2014-12-08T15:17:07Z |
Discrete dopant fluctuated 20nm/15nm-gate planar CMOS
|
Yang, Fu-Liang; Hwang, Jiunn-Ren; Chen, Hung-Ming; Shen, Jeng-Jung; Yu, Shao-Ming; Li, Yiming; Tang, Denny D. |
| 國立交通大學 |
2014-12-08T15:12:20Z |
Strained CMOS devices with shallow-trench-isolation stress buffer layers
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Li, Yiming; Chen, Hung-Ming; Yu, Shao-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang |
| 國立交通大學 |
2014-12-08T15:11:24Z |
Discrete dopant fluctuations in 20-nm/15-nm-gate planar CMOS
|
Li, Yiming; Yu, Shao-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang |
| 國立交通大學 |
2014-12-08T15:08:33Z |
Characteristic fluctuation dependence on discrete dopant for 16nm SOI FinFETs at different temperature
|
Li, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming; Yeh, Ta-Ching; Cheng, Hui-Wen; Chen, Hung-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang |
Showing items 1-6 of 6 (1 Page(s) Totally)
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