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机构 日期 题名 作者
國立成功大學 2016-11-01 The effect of high concentration of phosphorus in aluminum-induced crystallization of amorphous silicon films Hwang, Jun-Dar; Luo, Lee-Chi; Brahma, Sanjaya; Lo, Kuang-Yao
國立交通大學 2014-12-08T15:13:47Z Selected area electrophoretic deposition of carbon nanotubes in triode structure for field emission device Chen, Kuang-Chung; Chen, Chia-Fu; Whang, Wha-Tzong; Chen, Kuo-Feng; Hwang, Jun-Dar; Ho, Kwan-Sin; Chang, Yu-Yang; Chan, Lih-Hsiung
大葉大學 2008-06 Low Temperature Oxidation of SiGe by Liquid-Phase Deposition Cheng, Y. H.;Kung, C. Y.;Hwang, Jun-Dar;Lin, H. Y.;Chan, H. J.;Chen, P. S.
大葉大學 2008-04 A high rectification-ratio nano-crystalline p-n junction diode prepared by metal-induced lateral crystallization for solar cell applications Hwang, Jun-Dar;Lee, K. S.
大葉大學 2008-02 Sputtered Indium tin oxide on p-GaN Chang, S. J.;Lan, C. H.;Hwang, Jun-Dar;cheng, Y. C.;Lin, W. J.;Lin, J. C.;Chen, H. Z.
大葉大學 2007-12 Improving the Performance of SiGe Meatl-Semiconductor-Metal Photodetectors by using an Amorphous Silicon Passivation Layer Chen, Y.H.;Hwang, Jun-Dar;Kung, C.Y.;Chen, P.S.;Wei, C.S.;Wu, C.K.;Liu, J.C.
大葉大學 2007-11 Investigation of AlGaN MOS Diode Prepared by Liquid-Phase Deposition Chang, S. J.;Lan, C. H.;Hwang, Jun-Dar;Lin, J.C.
大葉大學 2007-11 Low Temperature Oxidation of SiGe by Liquid-Phase Deposition Chen, Y. H.;Kung, C. Y.;Hwang, Jun-Dar;Lin, H. Y.;Chan, H. J.
大葉大學 2007-11 Investigation of the Si1-xGex/Si heterojunction Schottky-barrier diodes with various Si-cap layers Chen, Y. H.;Hwang, Jun-Dar;Kung, C. Y.;Chang, W. T.;Liu, J. C.;Chen, P. S.
大葉大學 2007-11 Effects of Hydrogenated-Amorphous-Silicon Layer on the Performance of SiGe Metal-Semiconductor-Metal Photodetectors Hwang, Jun-Dar;Chen, Y.H.;Kun, C.Y.;Liu, J.C.

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