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Institution Date Title Author
國立成功大學 2016-11-01 The effect of high concentration of phosphorus in aluminum-induced crystallization of amorphous silicon films Hwang, Jun-Dar; Luo, Lee-Chi; Brahma, Sanjaya; Lo, Kuang-Yao
國立交通大學 2014-12-08T15:13:47Z Selected area electrophoretic deposition of carbon nanotubes in triode structure for field emission device Chen, Kuang-Chung; Chen, Chia-Fu; Whang, Wha-Tzong; Chen, Kuo-Feng; Hwang, Jun-Dar; Ho, Kwan-Sin; Chang, Yu-Yang; Chan, Lih-Hsiung
大葉大學 2008-06 Low Temperature Oxidation of SiGe by Liquid-Phase Deposition Cheng, Y. H.;Kung, C. Y.;Hwang, Jun-Dar;Lin, H. Y.;Chan, H. J.;Chen, P. S.
大葉大學 2008-04 A high rectification-ratio nano-crystalline p-n junction diode prepared by metal-induced lateral crystallization for solar cell applications Hwang, Jun-Dar;Lee, K. S.
大葉大學 2008-02 Sputtered Indium tin oxide on p-GaN Chang, S. J.;Lan, C. H.;Hwang, Jun-Dar;cheng, Y. C.;Lin, W. J.;Lin, J. C.;Chen, H. Z.
大葉大學 2007-12 Improving the Performance of SiGe Meatl-Semiconductor-Metal Photodetectors by using an Amorphous Silicon Passivation Layer Chen, Y.H.;Hwang, Jun-Dar;Kung, C.Y.;Chen, P.S.;Wei, C.S.;Wu, C.K.;Liu, J.C.
大葉大學 2007-11 Investigation of AlGaN MOS Diode Prepared by Liquid-Phase Deposition Chang, S. J.;Lan, C. H.;Hwang, Jun-Dar;Lin, J.C.
大葉大學 2007-11 Low Temperature Oxidation of SiGe by Liquid-Phase Deposition Chen, Y. H.;Kung, C. Y.;Hwang, Jun-Dar;Lin, H. Y.;Chan, H. J.
大葉大學 2007-11 Investigation of the Si1-xGex/Si heterojunction Schottky-barrier diodes with various Si-cap layers Chen, Y. H.;Hwang, Jun-Dar;Kung, C. Y.;Chang, W. T.;Liu, J. C.;Chen, P. S.
大葉大學 2007-11 Effects of Hydrogenated-Amorphous-Silicon Layer on the Performance of SiGe Metal-Semiconductor-Metal Photodetectors Hwang, Jun-Dar;Chen, Y.H.;Kun, C.Y.;Liu, J.C.
大葉大學 2007-09 High Photo-to-Dark Current Ratuo in SiGe/Si Schottky-Barrier Photodetector by using an a-Si:H Cap layer Hwang, Jun-Dar;Chen, Y.H.;Kung, C.Y.;Liu, J.C.
大葉大學 2007-09 Deep Ultraviolet-Assisted Photo-Electro-Chemical Wet Etching of N-Type GaN HWANG, JUN-DAR;YANG, GWO-HUEI;XU, NAI-WEI;GUO, YOU-XIN;ZHANG, ZHENG-HONG;LI, RONG-YUAN;CHAN, CHIEN-MAO
國立成功大學 2007-08 Indium-tin-oxide metal-insulator-semiconductor GaN ultraviolet photodetectors using liquid-phase-deposition oxide Yang, Gow-Huei; Hwang, Jun-Dar; Lan, Chih-Hsueh; Chan, Chien-Mao; Chen, Hone-Zem; Chang, Shoou-Jinn
大葉大學 2007-07 Selected Area Electrophoretic Deposition of Carbon Nanotubes in Triode Structure for Fielc Emission Device Chen, K.C.;Chen, C.F.;Whang, W.T.;Chen, K.F.;Hwang, Jun-Dar;Ho, K..S.;Chang, Y.Y.;Chan, L.H.
大葉大學 2007-06 Effect of Different Sputter Power on ITO/p-GaN and their Interface Investigation Lan, C. H.;Chang, S. J.;Hwang, Jun-Dar;Lin, J. C.;Hwang, C. C.
大葉大學 2006-12 Passivating Function of SiGe Metal Semiconductor Metal Photodetector by Using Amorphous Silicon Chen, Yu-Hung;Hwang, Jun-Dar;Kung, C. Y.;Wei, C. S.;Wu, C.K.;Liu, J. C.;Chen, P.S.
大葉大學 2006-12 Metal-Induced Solar Cell Fabricated on Silicon Substrate Hwang, Jun-Dar;Liu, Jun-Chin;Kung, Chung-Yuan
大葉大學 2006-12 Electrical properties of SiO2/n-GaN metal oxide semiconductor with Liquid-Phase-Deposition Oxide Hwang, Jun-Dar;Lin, T. C.
國立成功大學 2006-02 Nonalloyed Ti/indium tin oxide and Ti ohmic contacts to n-type GaN using plasma pre-treatmentnn Hwang, Jun-Dar; Yang, Gow-Huei; Lin, C. C.; Chang, Shoou-Jinn
大葉大學 2005-10 Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2 Hwang, Jun-Dar;Chang, W.T.;Hseih, K.H.;Yang, G.H.;wu, C.Y.;Chen, P. S.
大葉大學 2005-10 Nitride-Based UV Metal-Insulator semiconductor Photodetector with Liquid-Phase-Deposition Oxide Hwang, Jun-Dar;Yang, G.H.;Yang, Y.Y.;Yao, P.C.
大葉大學 2005-07 Gallium nitride photoconductive ultraviolet sensor with a sputtered transparent indium-tin-oxide ohmic contac Hwang, Jun-Dar;Lin, C.C.
大葉大學 2005-06 Two-Step Annealing for the Nickel-induced Crystallization of Amorphous Silicon Films Hwang, Jun-Dar;Chang, Jyh-Yeu;Chen, G. J.
大葉大學 2005-05 Dopant Effect on in-situ Doped Metal-Induced Lateral Crystallization of Amorphous Silicon Films Hwang, Jun-Dar;Chang, Jyh-Yeu;Wu, Ching-Yuan
大葉大學 2005-04 Enhancing P-Type Conductivity in Mg-Doped GaN Using Oxygen and Nitrogen Plasma Activation Hwang, Jun-Dar;Lai, Zhca-Young;Wu, Ching-Yuan;Chang, Shoou-Jinn
國立成功大學 2005-04 Enhancing P-type conductivity in Mg-doped GaN using oxygen and nitrogen plasma activation Hwang, Jun-Dar; Lai, Zhca-Yong; Wu, Ching-Yuan; Chang, Shoou-Jinn
大葉大學 2005-02 GaN MOS Ultraviolet Photodetector with Liquid Phase Deposition (LPD) Oxide Hwang, Jun-Dar
大葉大學 2005-01 A Novel Transparent Ohmic Contact of Indium Tin Oxide to N-Type GaN Hwang, Jun-Dar;Yang, G.H.;Chang, W. T.;Lin, C.C.;Chuang, R.W.;Chang, S. J.
大葉大學 2005-01 Nano-structural silicon films prepared by metal-induced growth using RTCVD system Hwang, Jun-Dar;Lin, Jyh-Wei
國立成功大學 2005-01 A novel transparent ohmic contact of indium tin oxide to n-type GaN Hwang, Jun-Dar; Yang, Gow-Huei; Chang, Wen-Tse; Lin, C. C.; Chuang, R. W.; Chang, Shoou-Jinn
國立成功大學 2000-01-06 Improvement of beta-SiC/Si pn diode high temperature characteristics with porous silicon layer Hsieh, Wen-Tse; Fang, Yean-Kuen; Lee, William J.; Ho, Chi-Wei; Wu, Kuen-Hsien; Ho, Jyh-Jier; Hwang, Jun-Dar

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