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机构 日期 题名 作者
臺大學術典藏 2021-09-02T00:05:24Z Light sensing enhancement and energy saving improvement in concentric double-MIS(p) tunnel diode structure with inner gate outer sensor operation Chen Y.-H;Hwu J.-G.; Chen Y.-H; Hwu J.-G.; JENN-GWO HWU
臺大學術典藏 2021-05-05T02:52:25Z Enhanced two states current in MOS-Gated MIS separate write/read storage device by oxide soft breakdown in remote gate Chen, W.-C.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2020-11-11T08:20:04Z Characterization of inversion tunneling current saturation behavior for MOS(p) capacitors with ultrathin oxides and high-k dielectrics CHIH-HAO CHEN; Chuang K.-C.; Hwu J.-G.
臺大學術典藏 2020-06-11T06:42:10Z Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N2O annealings Wu, Y.-L.;Kuo, K.-M.;Hwu, J.-G.; Wu, Y.-L.; Kuo, K.-M.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2020-06-11T06:42:10Z Improvement of oxide leakage currents in mos structures by postirradiation annealing Lin, J.-J.;Hwu, J.-G.; Lin, J.-J.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2020-06-11T06:42:10Z The device-perimeter dependency in the transient current of a metal-insulator-metal-insulator-semiconductor capacitor with anodic oxide films Liao, C.-S.;Hwu, J.-G.; Liao, C.-S.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2020-06-11T06:42:10Z Two capacitance states memory characteristic in metal–oxide–semiconductor structure controlled by an outer MOS-gate ring Li, H.-J.;Yang, C.-F.;Hwu, J.-G.; Li, H.-J.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2020-06-11T06:42:09Z Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation Lu, W.-S.;Chou, J.-S.;Lee, S.-C.;Hwu, J.-G.; Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2020-06-11T06:23:10Z Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation Lu, W.-S.;Chou, J.-S.;Lee, S.-C.;Hwu, J.-G.; Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; Hwu, J.-G.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:10:03Z Formation of single crystal si-nanowire by electric field self-redistribution effect in anodic oxidation for multilayer array application Tseng, P.-H.;Tian, W.-C.;Pan, S.C.;Hwu, J.-G.; Tseng, P.-H.; Tian, W.-C.; Pan, S.C.; Hwu, J.-G.; WEI-CHENG TIAN

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