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机构	日期	题名	作者
臺大學術典藏	2018-09-10T09:44:20Z	Effect of H2O on the electrical characteristics of ultra-thin SiO2 prepared with and without vacuum treatments after anodization	Chen, T.-Y.;Lu, H.-W.;Hwu, J.-G.; Chen, T.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T09:44:20Z	Effect of electrons trapping/de-trapping at Si-SiO2 interface on two-state current in MOS(p) structure with ultra-thin SiO2 by anodization	Hwu, J.-G.; JENN-GWO HWU; Chen, T.-Y.;Pang, C.-S.;Hwu, J.-G.; Chen, T.-Y.; Pang, C.-S.
臺大學術典藏	2018-09-10T09:44:19Z	Sensitivity enhancement of metal-oxide-semiconductor tunneling photodiode with trapped electrons in ultra-thin SiO2 layer	Chen, T.-Y.;Hwu, J.-G.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T09:44:19Z	Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers	JENN-GWO HWU; Hwu, J.-G.; Lee, C.-W.; Lee, C.-W.;Hwu, J.-G.
臺大學術典藏	2018-09-10T09:44:19Z	Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectrics	Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T09:44:19Z	Nitric acid compensated aluminum oxide dielectrics with improved negative bias reliability and positive bias temperature response	Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T09:44:19Z	Interface trap redistribution and deep depletion behavior of non-planar MOS with ultra thin oxide grown by anodic oxidation	Hwu, J.-G.; JENN-GWO HWU; Tseng, P.-H.; Tseng, P.-H.;Hwu, J.-G.
臺大學術典藏	2018-09-10T09:44:19Z	Improvement of electrical performance of HfO2/SiO 2/4H-SiC structure with thin SiO2	Hsu, C.-M.;Hwu, J.-G.; Hsu, C.-M.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T09:44:19Z	Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect	Lu, H.-W.;Hwu, J.-G.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T08:36:18Z	Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides	Chen, K.-M.;Hwu, J.-G.; Chen, K.-M.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T08:36:17Z	Investigation of the two-state current conduction mechanism in high-kSiO 2 stacked dielectric with high bandgap 4H-SiC substrate	Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T08:36:17Z	Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide	JENN-GWO HWU; Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Chen, T.-Y.;Lu, H.-W.;Hwu, J.-G.
臺大學術典藏	2018-09-10T08:36:17Z	Electrical characteristics and temperature response of Al 2O 3 gate dielectrics with and without nitric acid compensation	Hwu, J.-G.; JENN-GWO HWU; Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.
臺大學術典藏	2018-09-10T08:36:17Z	Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitor	Lu, H.-W.;Chen, T.-Y.;Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T08:36:17Z	Comparison of the reliability of thin Al2O3 gate dielectrics prepared by in situ oxidation of sputtered aluminum in oxygen ambient with and without nitric acid compensation	Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T08:36:16Z	Two-state current conduction in high-k/SiO2 stacked dielectric with high bandgap 4H-SiC substrate	Chiang, J.-C.;Hwu, J.-G.; Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T08:36:16Z	Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching	Wang, C.-Y.;Lu, H.-W.;Hwu, J.-G.; Wang, C.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T08:09:41Z	Characterization of stacked hafnium oxide (HfO2) /silicon dioxide (SiO2) metal-oxide-semiconductor tunneling temperature sensors	Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T08:09:40Z	Trench structure metal- oxide-semiconductor (MOS) solar cells with oxides prepared by anodization technique	Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T08:09:40Z	Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure	JENN-GWO HWU; Hwu, J.-G.; Chen, C.-H.; Chen, C.-H.;Hwu, J.-G.
臺大學術典藏	2018-09-10T08:09:40Z	Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high- k material	Cheng, J.-Y.;Lu, H.-T.;Hwu, J.-G.; Cheng, J.-Y.; Lu, H.-T.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T08:09:40Z	Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides	Cheng, J.-Y.;Lu, H.-T.;Yang, C.-Y.;Hwu, J.-G.; Cheng, J.-Y.; Lu, H.-T.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:09Z	Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation	Yeh, K.-L.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:09Z	Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments	Hwu, J.-G.;Fu, S.-L.; Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:09Z	Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devices	Hwu, J.-G.;Chuang, J.-B.;Fu, S.-L.; Hwu, J.-G.; Chuang, J.-B.; Fu, S.-L.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:08Z	Characterization of stacked hafnium oxide (HfO2) / silicon dioxide (SiO2) metal-oxide-semiconductor (MOS) tunneling temperature sensors	Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:08Z	Characterization of inversion tunneling current saturation behavior for MOS(p) capacitors with ultrathin oxides and high-k dielectrics	Chen, C.-H.;Chuang, K.-C.;Hwu, J.-G.; Chen, C.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:08Z	Characteristics and reliability of hafnium oxide dielectric stacks with room temperature grown interfacial anodic oxide	Chang, C.-H.;Hwu, J.-G.; Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:08Z	The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides	Lee, K.-C.; Chang, H.-Y.; Chang, H.; Hwu, J.-G.; Wung, T.-S.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:08Z	Improvement in the electrical properties of thin gate oxides by chemical-assisted electron stressing followed by annealing (CAESA)	Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:07Z	Metal-oxide-semiconductor structure solar cell prepared by lowerature (<400°C) anodization technique	Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:07Z	Effect of tensile stress on mos capacitors with ultra-thin gate oxide	Chen, H.-L.;Lee, C.-J.;Hwu, J.-G.; Chen, H.-L.; Lee, C.-J.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:07Z	Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides	Cheng, J.-Y.;Huang, C.-T.;Hwu, J.-G.; Cheng, J.-Y.; Huang, C.-T.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:07Z	Comparison of lateral non-uniformity phenomena between HfO2 and SiO2 from magnified C-V curves in inversion region	Cheng, J.Y.;Huang, C.T.;Lu, H.T.;Hwu, J.G.; Cheng, J.Y.; Huang, C.T.; Lu, H.T.; Hwu, J.G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:07Z	Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistors	Tseng, J.-C.;Hwu, J.-G.; Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:07Z	Low temperature tandem aluminum oxides prepared by DAC-ANO compensation in nitric acid	Yang, C.-Y.;Hwu, J.-G.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T07:29:06Z	Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputtering	Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU; Chang, C.-H.;Hwu, J.-G.
臺大學術典藏	2018-09-10T07:29:06Z	Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization method	Chuang, K.-C.;Hwu, J.-G.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T06:57:01Z	The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambient	Hwu, J.-G.;Fu, S.-L.; Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU
臺大學術典藏	2018-09-10T06:57:00Z	Shallow level trap formation in SiO2 induced by high field and thermal stresses	Lin, H.-P.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T06:57:00Z	Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stresses	Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T06:57:00Z	Rapid thermal postoxidation anneal engineering in thin gate oxides with al gates	Chen, C.-Y.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T06:56:59Z	Ultrathin gate oxides prepared by tensile-stress oxidation in tilted cathode anodization system	Wang, C.-C.; Li, T.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T06:56:59Z	Silicon oxide gate dielectric on n-type 4H-SiC prepared by low thermal budget anodization method	Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T05:52:22Z	Relationship between mobile charges and interface trap states in silicon mos capacitors	Hwu, J.-G.;Wang, W.-S.;Chiou, Y.-L.; Hwu, J.-G.; Wang, W.-S.; Chiou, Y.-L.; JENN-GWO HWU
臺大學術典藏	2018-09-10T05:52:22Z	Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique	Hwu, J.G.;Lin, C.M.;Wang, W.S.; Hwu, J.G.; Lin, C.M.; Wang, W.S.; JENN-GWO HWU
臺大學術典藏	2018-09-10T05:52:22Z	Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique	Hwu, J.G.;Wang, W.S.; Hwu, J.G.; Wang, W.S.; JENN-GWO HWU
臺大學術典藏	2018-09-10T05:52:21Z	Rapid thermal post-metallization annealing effect on thin gate oxides	Jeng, M.-J.;Lin, H.-S.;Hwu, J-G.; Jeng, M.-J.; Lin, H.-S.; Hwu, J-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T05:52:21Z	Metal-oxide-semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method	Shen, Y.-P.;Hwu, J.-G.; Shen, Y.-P.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏	2018-09-10T05:52:21Z	Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O	Jeng, M.-J.;Hwu, J.-G.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU

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