| 臺大學術典藏 |
2021-09-02T00:05:24Z |
Light sensing enhancement and energy saving improvement in concentric double-MIS(p) tunnel diode structure with inner gate outer sensor operation
|
Chen Y.-H;Hwu J.-G.; Chen Y.-H; Hwu J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2021-05-05T02:52:25Z |
Enhanced two states current in MOS-Gated MIS separate write/read storage device by oxide soft breakdown in remote gate
|
Chen, W.-C.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-11-11T08:20:04Z |
Characterization of inversion tunneling current saturation behavior for MOS(p) capacitors with ultrathin oxides and high-k dielectrics
|
CHIH-HAO CHEN; Chuang K.-C.; Hwu J.-G. |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N2O annealings
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Wu, Y.-L.;Kuo, K.-M.;Hwu, J.-G.; Wu, Y.-L.; Kuo, K.-M.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
Improvement of oxide leakage currents in mos structures by postirradiation annealing
|
Lin, J.-J.;Hwu, J.-G.; Lin, J.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
The device-perimeter dependency in the transient current of a metal-insulator-metal-insulator-semiconductor capacitor with anodic oxide films
|
Liao, C.-S.;Hwu, J.-G.; Liao, C.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
Two capacitance states memory characteristic in metal–oxide–semiconductor structure controlled by an outer MOS-gate ring
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Li, H.-J.;Yang, C.-F.;Hwu, J.-G.; Li, H.-J.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:09Z |
Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation
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Lu, W.-S.;Chou, J.-S.;Lee, S.-C.;Hwu, J.-G.; Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:23:10Z |
Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation
|
Lu, W.-S.;Chou, J.-S.;Lee, S.-C.;Hwu, J.-G.; Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; Hwu, J.-G.; SI-CHEN LEE |
| 臺大學術典藏 |
2020-06-11T06:10:03Z |
Formation of single crystal si-nanowire by electric field self-redistribution effect in anodic oxidation for multilayer array application
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Tseng, P.-H.;Tian, W.-C.;Pan, S.C.;Hwu, J.-G.; Tseng, P.-H.; Tian, W.-C.; Pan, S.C.; Hwu, J.-G.; WEI-CHENG TIAN |
| 臺大學術典藏 |
2020-01-13T08:20:48Z |
Stress effect on the kinetics of silicon thermal oxidation
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Yen, J. Y.;Hwu, J. G.Jia-Yush Yen; Yen, J. Y.; Hwu, J. G.; JIA-YUSH YEN |
| 臺大學術典藏 |
2020-01-13T08:20:48Z |
Enhancement of silicon oxidation rate due to tensile mechanical stress
|
Jia-Yush YenYen, J. Y.;Hwu, J. G.; Yen, J. Y.; Hwu, J. G.; JIA-YUSH YEN |
| 臺大學術典藏 |
2020-01-13T08:20:47Z |
Effect of mechanical stress on characteristics of silicon thermal oxides
|
Jia-Yush YenYen, J. Y.;Huang, C. H.;Hwu, J. G.; Yen, J. Y.; Huang, C. H.; Hwu, J. G.; JIA-YUSH YEN |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Effect of trapped electrons in ultrathin SiO2 on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitor
|
Chen, T.-Y.;Hwu, J.-G.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substrates
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Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide
|
Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Formation of single crystal si-nanowire by electric field self-redistribution effect in anodic oxidation for multilayer array application
|
Tian, W.-C.; Tseng, P.-H.;Tian, W.-C.;Pan, S.C.;Hwu, J.-G.; Tseng, P.-H.; JENN-GWO HWU; Hwu, J.-G.; Pan, S.C. |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxides
|
Lu, H.-W.;Hwu, J.-G.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Role of lateral diffusion current in perimeter-dependent current of MOS(p) tunneling temperature sensors
|
Lin, Y.-K.;Hwu, J.-G.; Lin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Photosensing by edge schottky barrier height modulation induced by lateral diffusion current in MOS(p) photodiode
|
JENN-GWO HWU; Lin, Y.-K.;Hwu, J.-G.; Lin, Y.-K.; Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Photo-induced tunneling currents in MOS structures with various HfO 2/SiO2 stacking dielectrics
|
Pang, C.-S.;Hwu, J.-G.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Non-planar substrate metal-oxide-semiconductor photo-capacitance detectors with enhanced deep depletion sensitivity at convex corner
|
Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Minority carriers induced schottky barrier height modulation in current behavior of metal-oxide-semiconductor tunneling diode
|
Lin, Y.-K.;Lin, L.;Hwu, J.-G.; Lin, Y.-K.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes
|
Lin, C.-C.;Hsu, P.-L.;Lin, L.;Hwu, J.-G.; Lin, C.-C.; Hsu, P.-L.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer
|
Pang, C.-S.;Hwu, J.-G.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU |
