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"hwu j g"的相關文件
顯示項目 11-20 / 110 (共11頁)
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| 臺大學術典藏 |
2020-01-13T08:20:48Z |
Stress effect on the kinetics of silicon thermal oxidation
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Yen, J. Y.;Hwu, J. G.Jia-Yush Yen; Yen, J. Y.; Hwu, J. G.; JIA-YUSH YEN |
| 臺大學術典藏 |
2020-01-13T08:20:48Z |
Enhancement of silicon oxidation rate due to tensile mechanical stress
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Jia-Yush YenYen, J. Y.;Hwu, J. G.; Yen, J. Y.; Hwu, J. G.; JIA-YUSH YEN |
| 臺大學術典藏 |
2020-01-13T08:20:47Z |
Effect of mechanical stress on characteristics of silicon thermal oxides
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Jia-Yush YenYen, J. Y.;Huang, C. H.;Hwu, J. G.; Yen, J. Y.; Huang, C. H.; Hwu, J. G.; JIA-YUSH YEN |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Effect of trapped electrons in ultrathin SiO2 on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitor
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Chen, T.-Y.;Hwu, J.-G.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substrates
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Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide
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Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Formation of single crystal si-nanowire by electric field self-redistribution effect in anodic oxidation for multilayer array application
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Tian, W.-C.; Tseng, P.-H.;Tian, W.-C.;Pan, S.C.;Hwu, J.-G.; Tseng, P.-H.; JENN-GWO HWU; Hwu, J.-G.; Pan, S.C. |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxides
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Lu, H.-W.;Hwu, J.-G.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Role of lateral diffusion current in perimeter-dependent current of MOS(p) tunneling temperature sensors
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Lin, Y.-K.;Hwu, J.-G.; Lin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Photosensing by edge schottky barrier height modulation induced by lateral diffusion current in MOS(p) photodiode
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JENN-GWO HWU; Lin, Y.-K.;Hwu, J.-G.; Lin, Y.-K.; Hwu, J.-G. |
顯示項目 11-20 / 110 (共11頁)
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