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教育部委托研究计画 计画执行:国立台湾大学图书馆
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"hwu j g"的相关文件
显示项目 101-110 / 110 (共11页)
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每页显示[10|25|50]项目
| 臺大學術典藏 |
2002 |
Silicon metal-oxide-semiconductor solar cells with oxide prepared by room temperature anodization in hydrofluosilicic acid solution
|
Hwu J.-G.; Hong C.-C.; CHIH-HAO CHEN |
| 臺大學術典藏 |
2001 |
Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stress
|
JENN-GWO HWU; Hwu, J.-G.; Huang, C.-H. |
| 臺大學術典藏 |
2001 |
An on-chip temperature sensor by utilizing a MOS tunneling diode
|
Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 國立臺灣大學 |
1997-06 |
Improvement in radiation-hard CMOS logic gates for noise margin
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Yih, S.-J.; Chang, M.-L.; Hwu, J.-G.; Feng, W.-S. |
| 臺大學術典藏 |
1996 |
Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal process
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JENN-GWO HWU; Hwu, J.-G.; Lu, W.-S.; Lu, W.-S.;Hwu, J.-G. |
| 國立臺灣大學 |
1992-07 |
Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation
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Chang-Liao, K.-S.; Hwu, J.-G. |
| 國立臺灣大學 |
1990-10 |
Electrical characterisation of the insulating property of Ta2O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency
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Hwu, J.-G.; Lin, S.-T. |
| 臺大學術典藏 |
1990-10 |
Electrical characterisation of the insulating property of Ta2O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency
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Hwu, J.-G.; Lin, S.-T.; Hwu, J.-G.; Lin, S.-T.; HwuJG |
| 國立臺灣大學 |
1986 |
Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique
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Hwu, J.G.; Lin, C.M.; Wang, W.S. |
| 國立臺灣大學 |
1985 |
Impurity-related interface trap in an Al/SiO2/Si(P) capacitor
|
Hwu, J.G.; Hwang, J.Z.; Chiou, Y.L. |
显示项目 101-110 / 110 (共11页)
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