| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Convex corner induced capacitance-voltage response from depletion to deep depletion in non-planar substrate metal-oxide-semiconductor capacitors with ultra thin oxide
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Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Formation of single crystal si-nanowire by electric field self-redistribution effect in anodic oxidation for multilayer array application
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Tian, W.-C.; Tseng, P.-H.;Tian, W.-C.;Pan, S.C.;Hwu, J.-G.; Tseng, P.-H.; JENN-GWO HWU; Hwu, J.-G.; Pan, S.C. |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Roles of interface and oxide trap density in the kinked current behavior of Al/SiO2/Si(p) structures with ultra-thin oxides
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Lu, H.-W.;Hwu, J.-G.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Role of lateral diffusion current in perimeter-dependent current of MOS(p) tunneling temperature sensors
|
Lin, Y.-K.;Hwu, J.-G.; Lin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Photosensing by edge schottky barrier height modulation induced by lateral diffusion current in MOS(p) photodiode
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JENN-GWO HWU; Lin, Y.-K.;Hwu, J.-G.; Lin, Y.-K.; Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Photo-induced tunneling currents in MOS structures with various HfO 2/SiO2 stacking dielectrics
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Pang, C.-S.;Hwu, J.-G.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Non-planar substrate metal-oxide-semiconductor photo-capacitance detectors with enhanced deep depletion sensitivity at convex corner
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Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Minority carriers induced schottky barrier height modulation in current behavior of metal-oxide-semiconductor tunneling diode
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Lin, Y.-K.;Lin, L.;Hwu, J.-G.; Lin, Y.-K.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Investigation on edge fringing effect and oxide thickness dependence of inversion current in metal-oxide-semiconductor tunneling diodes with comb-shaped electrodes
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Lin, C.-C.;Hsu, P.-L.;Lin, L.;Hwu, J.-G.; Lin, C.-C.; Hsu, P.-L.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:16Z |
Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient interfacial layer
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Pang, C.-S.;Hwu, J.-G.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T09:44:20Z |
Effect of H2O on the electrical characteristics of ultra-thin SiO2 prepared with and without vacuum treatments after anodization
|
Chen, T.-Y.;Lu, H.-W.;Hwu, J.-G.; Chen, T.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T09:44:20Z |
Effect of electrons trapping/de-trapping at Si-SiO2 interface on two-state current in MOS(p) structure with ultra-thin SiO2 by anodization
|
Hwu, J.-G.; JENN-GWO HWU; Chen, T.-Y.;Pang, C.-S.;Hwu, J.-G.; Chen, T.-Y.; Pang, C.-S. |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Sensitivity enhancement of metal-oxide-semiconductor tunneling photodiode with trapped electrons in ultra-thin SiO2 layer
|
Chen, T.-Y.;Hwu, J.-G.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers
|
JENN-GWO HWU; Hwu, J.-G.; Lee, C.-W.; Lee, C.-W.;Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectrics
|
Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Nitric acid compensated aluminum oxide dielectrics with improved negative bias reliability and positive bias temperature response
|
Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Interface trap redistribution and deep depletion behavior of non-planar MOS with ultra thin oxide grown by anodic oxidation
|
Hwu, J.-G.; JENN-GWO HWU; Tseng, P.-H.; Tseng, P.-H.;Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Improvement of electrical performance of HfO2/SiO 2/4H-SiC structure with thin SiO2
|
Hsu, C.-M.;Hwu, J.-G.; Hsu, C.-M.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect
|
Lu, H.-W.;Hwu, J.-G.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:18Z |
Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides
|
Chen, K.-M.;Hwu, J.-G.; Chen, K.-M.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Investigation of the two-state current conduction mechanism in high-kSiO 2 stacked dielectric with high bandgap 4H-SiC substrate
|
Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide
|
JENN-GWO HWU; Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Chen, T.-Y.;Lu, H.-W.;Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Electrical characteristics and temperature response of Al 2O 3 gate dielectrics with and without nitric acid compensation
|
Hwu, J.-G.; JENN-GWO HWU; Lin, C.-C.;Hwu, J.-G.; Lin, C.-C. |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitor
|
Lu, H.-W.;Chen, T.-Y.;Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Comparison of the reliability of thin Al2O3 gate dielectrics prepared by in situ oxidation of sputtered aluminum in oxygen ambient with and without nitric acid compensation
|
Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU |
