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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"hwu j g"的相關文件
顯示項目 31-40 / 110 (共11頁)
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每頁顯示[10|25|50]項目
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Nitric acid compensated aluminum oxide dielectrics with improved negative bias reliability and positive bias temperature response
|
Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Interface trap redistribution and deep depletion behavior of non-planar MOS with ultra thin oxide grown by anodic oxidation
|
Hwu, J.-G.; JENN-GWO HWU; Tseng, P.-H.; Tseng, P.-H.;Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Improvement of electrical performance of HfO2/SiO 2/4H-SiC structure with thin SiO2
|
Hsu, C.-M.;Hwu, J.-G.; Hsu, C.-M.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T09:44:19Z |
Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect
|
Lu, H.-W.;Hwu, J.-G.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:18Z |
Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides
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Chen, K.-M.;Hwu, J.-G.; Chen, K.-M.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Investigation of the two-state current conduction mechanism in high-kSiO 2 stacked dielectric with high bandgap 4H-SiC substrate
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Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide
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JENN-GWO HWU; Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Chen, T.-Y.;Lu, H.-W.;Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Electrical characteristics and temperature response of Al 2O 3 gate dielectrics with and without nitric acid compensation
|
Hwu, J.-G.; JENN-GWO HWU; Lin, C.-C.;Hwu, J.-G.; Lin, C.-C. |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitor
|
Lu, H.-W.;Chen, T.-Y.;Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Comparison of the reliability of thin Al2O3 gate dielectrics prepared by in situ oxidation of sputtered aluminum in oxygen ambient with and without nitric acid compensation
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Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU |
顯示項目 31-40 / 110 (共11頁)
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