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"hwu j g"的相關文件
顯示項目 41-50 / 110 (共11頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
| 臺大學術典藏 |
2018-09-10T08:36:16Z |
Two-state current conduction in high-k/SiO2 stacked dielectric with high bandgap 4H-SiC substrate
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Chiang, J.-C.;Hwu, J.-G.; Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:16Z |
Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching
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Wang, C.-Y.;Lu, H.-W.;Hwu, J.-G.; Wang, C.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:09:41Z |
Characterization of stacked hafnium oxide (HfO2) /silicon dioxide (SiO2) metal-oxide-semiconductor tunneling temperature sensors
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Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:09:40Z |
Trench structure metal- oxide-semiconductor (MOS) solar cells with oxides prepared by anodization technique
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Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:09:40Z |
Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure
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JENN-GWO HWU; Hwu, J.-G.; Chen, C.-H.; Chen, C.-H.;Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T08:09:40Z |
Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high- k material
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Cheng, J.-Y.;Lu, H.-T.;Hwu, J.-G.; Cheng, J.-Y.; Lu, H.-T.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:09:40Z |
Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides
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Cheng, J.-Y.;Lu, H.-T.;Yang, C.-Y.;Hwu, J.-G.; Cheng, J.-Y.; Lu, H.-T.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:09Z |
Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation
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Yeh, K.-L.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:09Z |
Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments
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Hwu, J.-G.;Fu, S.-L.; Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:09Z |
Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devices
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Hwu, J.-G.;Chuang, J.-B.;Fu, S.-L.; Hwu, J.-G.; Chuang, J.-B.; Fu, S.-L.; JENN-GWO HWU |
顯示項目 41-50 / 110 (共11頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
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