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機構 日期 題名 作者
臺大學術典藏 2018-09-10T07:29:07Z Low temperature tandem aluminum oxides prepared by DAC-ANO compensation in nitric acid Yang, C.-Y.;Hwu, J.-G.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T07:29:06Z Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputtering Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU; Chang, C.-H.;Hwu, J.-G.
臺大學術典藏 2018-09-10T07:29:06Z Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization method Chuang, K.-C.;Hwu, J.-G.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T06:57:01Z The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambient Hwu, J.-G.;Fu, S.-L.; Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU
臺大學術典藏 2018-09-10T06:57:00Z Shallow level trap formation in SiO2 induced by high field and thermal stresses Lin, H.-P.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T06:57:00Z Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stresses Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T06:57:00Z Rapid thermal postoxidation anneal engineering in thin gate oxides with al gates Chen, C.-Y.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T06:56:59Z Ultrathin gate oxides prepared by tensile-stress oxidation in tilted cathode anodization system Wang, C.-C.; Li, T.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T06:56:59Z Silicon oxide gate dielectric on n-type 4H-SiC prepared by low thermal budget anodization method Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T05:52:22Z Relationship between mobile charges and interface trap states in silicon mos capacitors Hwu, J.-G.;Wang, W.-S.;Chiou, Y.-L.; Hwu, J.-G.; Wang, W.-S.; Chiou, Y.-L.; JENN-GWO HWU

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