| 臺大學術典藏 |
2018-09-10T07:29:07Z |
Low temperature tandem aluminum oxides prepared by DAC-ANO compensation in nitric acid
|
Yang, C.-Y.;Hwu, J.-G.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T07:29:06Z |
Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputtering
|
Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU; Chang, C.-H.;Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T07:29:06Z |
Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization method
|
Chuang, K.-C.;Hwu, J.-G.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambient
|
Hwu, J.-G.;Fu, S.-L.; Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Shallow level trap formation in SiO2 induced by high field and thermal stresses
|
Lin, H.-P.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stresses
|
Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Rapid thermal postoxidation anneal engineering in thin gate oxides with al gates
|
Chen, C.-Y.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:56:59Z |
Ultrathin gate oxides prepared by tensile-stress oxidation in tilted cathode anodization system
|
Wang, C.-C.; Li, T.-H.; Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:56:59Z |
Silicon oxide gate dielectric on n-type 4H-SiC prepared by low thermal budget anodization method
|
Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:22Z |
Relationship between mobile charges and interface trap states in silicon mos capacitors
|
Hwu, J.-G.;Wang, W.-S.;Chiou, Y.-L.; Hwu, J.-G.; Wang, W.-S.; Chiou, Y.-L.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:22Z |
Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique
|
Hwu, J.G.;Lin, C.M.;Wang, W.S.; Hwu, J.G.; Lin, C.M.; Wang, W.S.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:22Z |
Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique
|
Hwu, J.G.;Wang, W.S.; Hwu, J.G.; Wang, W.S.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Rapid thermal post-metallization annealing effect on thin gate oxides
|
Jeng, M.-J.;Lin, H.-S.;Hwu, J-G.; Jeng, M.-J.; Lin, H.-S.; Hwu, J-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Metal-oxide-semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method
|
Shen, Y.-P.;Hwu, J.-G.; Shen, Y.-P.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O
|
Jeng, M.-J.;Hwu, J.-G.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics
|
Lee, K.-C.;Hwu, J.-G.; Lee, K.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:21Z |
The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors
|
Hwu, J.-G.;Chang, J.-J.;Wang, W.-S.; Hwu, J.-G.; Chang, J.-J.; Wang, W.-S.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:20Z |
Improvement in electrical characteristics of high- k Al2O 3 gate dielectric by field-assisted nitric oxidation
|
Hwu, J.-G.; JENN-GWO HWU; Chuang, K.-C. |
| 臺大學術典藏 |
2018-09-10T05:52:20Z |
Impact of strain-temperature stress on ultrathin oxide
|
Tung, C.-W.; Yang, Y.-L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:20Z |
Thin-gate oxides prepared by pure water anodization followed by rapid thermal densification
|
Jeog, M.-J.;Hwu, J.-G.; Jeog, M.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T05:52:19Z |
Lateral nonuniformity of effective oxide charges in MOS capacitors with A12O3 gate dielectrics
|
Huang, S.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:54Z |
Improvement of oxide thickness uniformity by high then low O2 pressure oxidation in rapid thermal processing
|
Hong, C.-C.; Chen, J.-L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:54Z |
Improvement in ultrathin rapid thermal oxide uniformity by the control of gas flow
|
Hong, C.-C.; Yen, Y.-R.; Su, J.-L.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:54Z |
Effect of mechanical stress on characteristics of silicon thermal oxides
|
JENN-GWO HWU; Yen, J.-Y.; Huang, C.-H.; Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T04:08:54Z |
Role of stress in irradiation-then-anneal technique used for improving radiation hardness of metal-insulator-semiconductor devices
|
Shu, K.; Liao, C.; Hwu, J.-G.; JENN-GWO HWU |
