| 臺大學術典藏 |
2018-09-10T03:44:50Z |
Effect of oxide resistance on the characterization of interface trap density in MOS structures
|
Lin, J.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Improvement in oxide thickness uniformity by repeated spike oxidation
|
Hong, C.-C.; Lee, C.-Y.; Hsieh, Y.-L.; Liu, C.-C.; Fong, I.-K.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress
|
Hong, C.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Application of anodization to reoxidize silicon nitride film
|
Lin, Y.-P.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:49Z |
Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments
|
Chang-Liao, K.-S.;Hwu, J.-G.; Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:48Z |
Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal
|
Chen, Y.-C.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T03:44:48Z |
Stress effect on the kinetics of silicon thermal oxidation
|
Yen, J.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2011 |
Comprehensive study on negative capacitance effect observed in MOS(n) capacitors with ultrathin gate oxides
|
Chang, S.-J.;Hwu, J.-G.; Chang, S.-J.; Hwu, J.-G.; JENN-GWO HWU |
| 國立臺灣大學 |
2009 |
Effect of Tensile Stress on MOS Capacitors with Ultra-thin Gate Oxide
|
Chen, H.L.; Lee, C.J.; Hwu, J.G. |
| 國立臺灣大學 |
2009 |
Characteristics and Reliability of Hafnium Oxide Dielectric Stacks with Room Temperature Grown Interfacial Anodic Oxide
|
Chang, C.-H.; Hwu, J.-G. |
| 臺大學術典藏 |
2002 |
Silicon metal-oxide-semiconductor solar cells with oxide prepared by room temperature anodization in hydrofluosilicic acid solution
|
Hwu J.-G.; Hong C.-C.; CHIH-HAO CHEN |
| 臺大學術典藏 |
2001 |
Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stress
|
JENN-GWO HWU; Hwu, J.-G.; Huang, C.-H. |
| 臺大學術典藏 |
2001 |
An on-chip temperature sensor by utilizing a MOS tunneling diode
|
Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU |
| 國立臺灣大學 |
1997-06 |
Improvement in radiation-hard CMOS logic gates for noise margin
|
Yih, S.-J.; Chang, M.-L.; Hwu, J.-G.; Feng, W.-S. |
| 臺大學術典藏 |
1996 |
Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal process
|
JENN-GWO HWU; Hwu, J.-G.; Lu, W.-S.; Lu, W.-S.;Hwu, J.-G. |
| 國立臺灣大學 |
1992-07 |
Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation
|
Chang-Liao, K.-S.; Hwu, J.-G. |
| 國立臺灣大學 |
1990-10 |
Electrical characterisation of the insulating property of Ta2O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency
|
Hwu, J.-G.; Lin, S.-T. |
| 臺大學術典藏 |
1990-10 |
Electrical characterisation of the insulating property of Ta2O5 in Al-Ta2O5-SiO2-Si capacitors by a low-frequency
|
Hwu, J.-G.; Lin, S.-T.; Hwu, J.-G.; Lin, S.-T.; HwuJG |
| 國立臺灣大學 |
1986 |
Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique
|
Hwu, J.G.; Lin, C.M.; Wang, W.S. |
| 國立臺灣大學 |
1985 |
Impurity-related interface trap in an Al/SiO2/Si(P) capacitor
|
Hwu, J.G.; Hwang, J.Z.; Chiou, Y.L. |
