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Institution Date Title Author
臺大學術典藏 2018-09-10T03:44:48Z Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal Chen, Y.-C.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T03:44:48Z Stress effect on the kinetics of silicon thermal oxidation Yen, J.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2011 Comprehensive study on negative capacitance effect observed in MOS(n) capacitors with ultrathin gate oxides Chang, S.-J.;Hwu, J.-G.; Chang, S.-J.; Hwu, J.-G.; JENN-GWO HWU
國立臺灣大學 2009 Effect of Tensile Stress on MOS Capacitors with Ultra-thin Gate Oxide Chen, H.L.; Lee, C.J.; Hwu, J.G.
國立臺灣大學 2009 Characteristics and Reliability of Hafnium Oxide Dielectric Stacks with Room Temperature Grown Interfacial Anodic Oxide Chang, C.-H.; Hwu, J.-G.
臺大學術典藏 2002 Silicon metal-oxide-semiconductor solar cells with oxide prepared by room temperature anodization in hydrofluosilicic acid solution Hwu J.-G.; Hong C.-C.; CHIH-HAO CHEN
臺大學術典藏 2001 Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stress JENN-GWO HWU; Hwu, J.-G.; Huang, C.-H.
臺大學術典藏 2001 An on-chip temperature sensor by utilizing a MOS tunneling diode Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU
國立臺灣大學 1997-06 Improvement in radiation-hard CMOS logic gates for noise margin Yih, S.-J.; Chang, M.-L.; Hwu, J.-G.; Feng, W.-S.
臺大學術典藏 1996 Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal process JENN-GWO HWU; Hwu, J.-G.; Lu, W.-S.; Lu, W.-S.;Hwu, J.-G.

Showing items 96-105 of 110  (11 Page(s) Totally)
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