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Taiwan Academic Institutional Repository >
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"hwu jenn gwo"
Showing items 1-10 of 210 (21 Page(s) Totally) 1 2 3 4 5 6 7 8 9 10 > >> View [10|25|50] records per page
| 臺大學術典藏 |
2020-06-11T06:42:11Z |
Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2 Layer
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Chen, Tzu-Yu;Hwu, Jenn-Gwo; Chen, Tzu-Yu; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
Edge-illuminated metal-oxide-semiconductor (MOS) solar cells with oxides prepared by liquid phase deposition method
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Lee, Kuo-Chung; Lin, Jin-Sheng; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
Application of anodization followed by rapid thermal treatment to thin gate oxide growth
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Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
C-V hysteresis instability in aluminum/tantalum oxide/silicon oxide/silicon capacitors due to postmetallization annealing and Co-60 irradiation
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Hwu, Jenn-Gwo;Jeng, Ming-Jer; Hwu, Jenn-Gwo; Jeng, Ming-Jer; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation
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Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Effect of starting oxide on electrical characteristics of metal-reoxidized nitrided oxide-semiconductor devices prepared by rapid thermal processes
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JENN-GWO HWU; Hwu, Jenn-Gwo; Chang-Liao, Kuei-Shu |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Dependence of hot-carrier and radiation hardnesses of metal-oxide-semiconductor capacitors on initial oxide resistance determined by charge-then-decay method
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Lin, Jing-Jenn; Lin, Kuan-Chin; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Application of irradiation-then-anneal treatment on the improvement of oxide properties in metal-oxide-semiconductor capacitors
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Lin, Jin-Jenn; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-07-06T15:02:10Z |
Studies of the Radiation Hard Fabrication Process of MOS Devices and the Radiation Stability of MOS Circuits
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Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
2018-07-06T15:02:04Z |
Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments
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Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S. |
Showing items 1-10 of 210 (21 Page(s) Totally) 1 2 3 4 5 6 7 8 9 10 > >> View [10|25|50] records per page
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