| 臺大學術典藏 |
2020-06-11T06:42:11Z |
Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2 Layer
|
Chen, Tzu-Yu;Hwu, Jenn-Gwo; Chen, Tzu-Yu; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
Edge-illuminated metal-oxide-semiconductor (MOS) solar cells with oxides prepared by liquid phase deposition method
|
Lee, Kuo-Chung; Lin, Jin-Sheng; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
Application of anodization followed by rapid thermal treatment to thin gate oxide growth
|
Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
C-V hysteresis instability in aluminum/tantalum oxide/silicon oxide/silicon capacitors due to postmetallization annealing and Co-60 irradiation
|
Hwu, Jenn-Gwo;Jeng, Ming-Jer; Hwu, Jenn-Gwo; Jeng, Ming-Jer; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation
|
Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Effect of starting oxide on electrical characteristics of metal-reoxidized nitrided oxide-semiconductor devices prepared by rapid thermal processes
|
JENN-GWO HWU; Hwu, Jenn-Gwo; Chang-Liao, Kuei-Shu |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Dependence of hot-carrier and radiation hardnesses of metal-oxide-semiconductor capacitors on initial oxide resistance determined by charge-then-decay method
|
Lin, Jing-Jenn; Lin, Kuan-Chin; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Application of irradiation-then-anneal treatment on the improvement of oxide properties in metal-oxide-semiconductor capacitors
|
Lin, Jin-Jenn; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-07-06T15:02:10Z |
Studies of the Radiation Hard Fabrication Process of MOS Devices and the Radiation Stability of MOS Circuits
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
2018-07-06T15:02:04Z |
Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments
|
Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S. |
| 臺大學術典藏 |
2018-07-06T15:02:04Z |
Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides
|
Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y.; 胡振國; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y. |
| 臺大學術典藏 |
2018-07-06T15:01:05Z |
Applications of Rapid Thermal Processing and Radiation Processing on Si Gate Oxides
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
2018-07-05T02:38:44Z |
Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States
|
Hwu, Jenn-Gwo; Wang, Way-Seen; Lin, J. J.; 胡振國; Lin, J. J.; 王維新; Hwu, Jenn-Gwo; Wang, Way-Seen |
| 國立交通大學 |
2014-12-13T10:40:11Z |
以含氮氧化矽閘極製程製作高穩定度矽金氧半元件
|
胡振國; HWU JENN-GWO |
| 國立臺灣大學 |
2010 |
Stack Engineering of Low-Temperature-Processing Al2O3 Dielectrics Prepared by Nitric Acid Oxidation for MOS Structure
|
Chen, Ching-Hang; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
2009-04-27T07:11:26Z |
Radiation Effects on the Oxide Properties of Silicon MOS Capacitor
|
胡振國;Lee, G. S.;Jeng, M. J.;王維新;李嗣涔; Hwu, Jenn-Gwo;Lee, G. S.;Jeng, M. J.;Wang, Way-Seen;Lee, Si-Chen; 胡振國; Lee, G. S.; Jeng, M. J.; 王維新; 李嗣涔; Hwu, Jenn-Gwo; Lee, G. S.; Jeng, M. J.; Wang, Way-Seen; Lee, Si-Chen |
| 臺大學術典藏 |
2009-04-27T04:28:29Z |
Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides
|
Lee, G. C.; Hwu, Jenn-Gwo; Lee, G. C.; 胡振國; Lee, G. C.; Hwu, Jenn-Gwo; Lee, G. C. |
| 臺大學術典藏 |
2009-04-27T04:27:06Z |
Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides
|
Hwu, Jenn-Gwo; Lee, K. C.; 胡振國; Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C. |
| 臺大學術典藏 |
2009-02-24T03:49:30Z |
Clockwise C-V Hysteresis Phenomena of Metal-Tantalum Oxide-Silicon-Oxide-Silicon(P) Capacitors Due to Leakage Current Through Tantalum Oxide
|
Tu, Y. K.; Wang, Way-Seen; Hwu, Jenn-Gwo; Hwu, Jenn-Gwo; Wang, Way-Seen; Tu, Y. K.; Jeng, M. J.; 胡振國; Jeng, M. J.; 王維新; Tu, Y. K. |
| 國立臺灣大學 |
2009 |
Thin Silicon Oxide Films on N-type 4H-SiC Prepared by Scanning Frequency Anodization Method
|
Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2009 |
Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides
|
Cheng, Jen-Yuan; Huang, Chiao-Ti; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2009 |
Characteraization of Stacked Hafnium Oxide (HfO2)/Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors
|
Wang, Chih-Yao; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2009 |
Comparison of Lateral Non-uniformity Phenomena between HfO2 and SiO2 from Magnified C-V Curves in Inversion Region
|
Cheng, Jen-Yuan; Huang, Chiao-Ti; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2009 |
Low Temperature Tandem Aluminum Oxides Prepared by DAC-ANO Compensation in Nitric Acid
|
Yang, Che-Yu; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2009 |
Characterization of Inversion Tunneling Current Saturation Behavior for MOS(p) Capacitors with Ultra-thin Oxides and High-k Dielectrics
|
Chen, Chih-Hao; Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
