| 臺大學術典藏 |
2020-06-11T06:42:11Z |
Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2 Layer
|
Chen, Tzu-Yu;Hwu, Jenn-Gwo; Chen, Tzu-Yu; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
Edge-illuminated metal-oxide-semiconductor (MOS) solar cells with oxides prepared by liquid phase deposition method
|
Lee, Kuo-Chung; Lin, Jin-Sheng; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
Application of anodization followed by rapid thermal treatment to thin gate oxide growth
|
Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:01Z |
C-V hysteresis instability in aluminum/tantalum oxide/silicon oxide/silicon capacitors due to postmetallization annealing and Co-60 irradiation
|
Hwu, Jenn-Gwo;Jeng, Ming-Jer; Hwu, Jenn-Gwo; Jeng, Ming-Jer; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T06:57:00Z |
Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation
|
Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Effect of starting oxide on electrical characteristics of metal-reoxidized nitrided oxide-semiconductor devices prepared by rapid thermal processes
|
JENN-GWO HWU; Hwu, Jenn-Gwo; Chang-Liao, Kuei-Shu |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Dependence of hot-carrier and radiation hardnesses of metal-oxide-semiconductor capacitors on initial oxide resistance determined by charge-then-decay method
|
Lin, Jing-Jenn; Lin, Kuan-Chin; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T04:08:55Z |
Application of irradiation-then-anneal treatment on the improvement of oxide properties in metal-oxide-semiconductor capacitors
|
Lin, Jin-Jenn; Hwu, Jenn-Gwo; JENN-GWO HWU |
| 臺大學術典藏 |
2018-07-06T15:02:10Z |
Studies of the Radiation Hard Fabrication Process of MOS Devices and the Radiation Stability of MOS Circuits
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
2018-07-06T15:02:04Z |
Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments
|
Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S. |
| 臺大學術典藏 |
2018-07-06T15:02:04Z |
Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides
|
Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y.; 胡振國; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y. |
| 臺大學術典藏 |
2018-07-06T15:01:05Z |
Applications of Rapid Thermal Processing and Radiation Processing on Si Gate Oxides
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
2018-07-05T02:38:44Z |
Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States
|
Hwu, Jenn-Gwo; Wang, Way-Seen; Lin, J. J.; 胡振國; Lin, J. J.; 王維新; Hwu, Jenn-Gwo; Wang, Way-Seen |
| 國立交通大學 |
2014-12-13T10:40:11Z |
以含氮氧化矽閘極製程製作高穩定度矽金氧半元件
|
胡振國; HWU JENN-GWO |
| 國立臺灣大學 |
2010 |
Stack Engineering of Low-Temperature-Processing Al2O3 Dielectrics Prepared by Nitric Acid Oxidation for MOS Structure
|
Chen, Ching-Hang; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
2009-04-27T07:11:26Z |
Radiation Effects on the Oxide Properties of Silicon MOS Capacitor
|
胡振國;Lee, G. S.;Jeng, M. J.;王維新;李嗣涔; Hwu, Jenn-Gwo;Lee, G. S.;Jeng, M. J.;Wang, Way-Seen;Lee, Si-Chen; 胡振國; Lee, G. S.; Jeng, M. J.; 王維新; 李嗣涔; Hwu, Jenn-Gwo; Lee, G. S.; Jeng, M. J.; Wang, Way-Seen; Lee, Si-Chen |
| 臺大學術典藏 |
2009-04-27T04:28:29Z |
Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides
|
Lee, G. C.; Hwu, Jenn-Gwo; Lee, G. C.; 胡振國; Lee, G. C.; Hwu, Jenn-Gwo; Lee, G. C. |
| 臺大學術典藏 |
2009-04-27T04:27:06Z |
Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides
|
Hwu, Jenn-Gwo; Lee, K. C.; 胡振國; Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C. |
| 臺大學術典藏 |
2009-02-24T03:49:30Z |
Clockwise C-V Hysteresis Phenomena of Metal-Tantalum Oxide-Silicon-Oxide-Silicon(P) Capacitors Due to Leakage Current Through Tantalum Oxide
|
Tu, Y. K.; Wang, Way-Seen; Hwu, Jenn-Gwo; Hwu, Jenn-Gwo; Wang, Way-Seen; Tu, Y. K.; Jeng, M. J.; 胡振國; Jeng, M. J.; 王維新; Tu, Y. K. |
| 國立臺灣大學 |
2009 |
Thin Silicon Oxide Films on N-type 4H-SiC Prepared by Scanning Frequency Anodization Method
|
Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2009 |
Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides
|
Cheng, Jen-Yuan; Huang, Chiao-Ti; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2009 |
Characteraization of Stacked Hafnium Oxide (HfO2)/Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors
|
Wang, Chih-Yao; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2009 |
Comparison of Lateral Non-uniformity Phenomena between HfO2 and SiO2 from Magnified C-V Curves in Inversion Region
|
Cheng, Jen-Yuan; Huang, Chiao-Ti; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2009 |
Low Temperature Tandem Aluminum Oxides Prepared by DAC-ANO Compensation in Nitric Acid
|
Yang, Che-Yu; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2009 |
Characterization of Inversion Tunneling Current Saturation Behavior for MOS(p) Capacitors with Ultra-thin Oxides and High-k Dielectrics
|
Chen, Chih-Hao; Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2009 |
Trapping Characteristics of Al2O3/HfO2/SiO2 Stack Structure Prepared by Low Temperature In-situ Oxidation in dc-sputtering
|
Chang, Chia-Hua; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2009 |
Metal–Oxide–Semiconductor Structure Solar Cell Prepared by Low-Temperature (<400°C) Anodization Technique
|
Wang, Chih-Yao; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Effect of strain-temperature stress on MOS structure with ultra-thin gate oxide
|
Lin, Chia-Nan; Yang, Yi-Lin; Chen, Wei-Ting; Lin, Shang-Chih; Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Ultrathin Gate Oxides Prepared by Tensile-Stress Oxidation in Tilted Cathode Anodization System
|
Wang, Chih-Ching; Li, Tsung-Hung; Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Shallow level trap formation in SiO2 induced by high field and thermal stresses
|
Lin, Hao-Peng; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Lateral Nonuniformity Effects of Border Traps on the Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors Subjected to High-Field Stresses
|
Tseng, Jen-Chou; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Silicon Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method
|
Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Effects of electrostatic discharge high-field current impulse on oxide breakdown
|
Tseng, Jen-Chou; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Low temperature (<400 ?C) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation
|
Chiang, Jung-Chin; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Modeling and Characterization of Hydrogen Induced Charge Loss in Nitride Trapping Memory
|
Yang, Yi-Lin; Chang, Chia-Hua; Shih, Yen-Hao; Hsieh, Kuang-Yeu; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Oxide-trapped charges induced by electrostatic discharge impulse stress
|
Tseng, Jen-Chou; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Analysis of Constitution and Characteristics of Lateral Nonuniformity Effects of MOS Devices Using QM-based Terman Method
|
Lin, Hao-Peng; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Reliability of Low Temperature Processing Hafnium Oxide Gate Dielectrics Prepared by Cost-effective Nitric Acid Oxidation (NAO) Technique
|
Chang, Chia-Hua; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Enhancement in Ultrathin Oxide Growth by Thermal-Induced Tensile Stress
|
Hung, Chien-Jui; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Impact of Strain-Temperature Stress on Ultrathin Oxide
|
Tung, Chia-Wei; Yang, Yi-Lin; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Lateral Nonuniformity of Effective Oxide Charges in MOS Capacitors With Al2O3 Gate Dielectrics
|
Huang, Szu-Wei; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Comparison of saturation current characteristics for ultrathin silicon oxides grown on n- and p-type silicon substrates simultaneously
|
Wang, Tsung-Miau; Chang, Chia-Hua; Chang, Shu-Jau; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Improvement in electrical characteristics of high-k Al2O3 gate dielectric by field-assisted nitric oxidation
|
Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Enhancement of Temperature Sensitivity for Metal–Oxide–Semiconductor (MOS) Tunneling Temperature Sensors by Utilizing Hafnium Oxide (HfO2) Film Added on Silicon Dioxide (SiO2)
|
Wang, Tsung-Miau; Chang, Chia-Hua; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Indication of Lateral Nonuniformity of Effective Oxide Charges in High-k Gate Dielectrics by Terman’s Method
|
Hwu, Jenn-Gwo; Huang, Szu-Wei |
| 國立臺灣大學 |
2006 |
Quality Improvement and Electrical characteristics of High-k Films after Receiving Direct Superimposed with Alternative Current Anodic Oxidation (DAC-ANO) Compensation
|
Hwu, Jenn-Gwo; Chang, Chia-Hua; Wang, Tsung-Miau |
| 國立臺灣大學 |
2005 |
The effect of photon illumination in rapid thermal processing on the characteristics of MOS structures with ultra-thin oxides examined by substrate injection
|
Huang, Chia-Hong; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2005 |
Temperature-induced voltage drop rearrangement and its effect on oxide breakdown in metal-oxide-semiconductor capacitor structure
|
Wang, Tsung-Miau; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004-10 |
Quality Improvement of Ultrathin Gate Oxide by Using Thermal Growth Followed by SF ANO Technique
|
Yang, Yi-Lin; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
2004-10 |
Quality Improvement of Ultrathin Gate Oxide by Using Thermal Growth Followed by SF ANO Technique
|
Yang, Yi-Lin; Hwu, Jenn-Gwo; Yang, Yi-Lin; Hwu, Jenn-Gwo |
