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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"hwu jenn gwo"的相關文件
顯示項目 101-110 / 210 (共21頁)
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每頁顯示[10|25|50]項目
| 國立臺灣大學 |
1994 |
Design and Fabrication of Basic Silicon MOS Digital Ciruits
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1994 |
Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation
|
胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S. |
| 國立臺灣大學 |
1994 |
Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings
|
胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M. |
| 國立臺灣大學 |
1994 |
Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides
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胡振國; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.; Lin, H. S. |
| 國立臺灣大學 |
1994 |
Stable Si MOS Devices with Oxynitride Gate Dielectrics
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胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1994 |
Characterization of Metal-Oxide-Semiconductor Capacitors with Improved Gate Oxides Prepared by Repeated Rapid Thermal Annealings in N20
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胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1994 |
Design of Radiation Hard CMOS Circuits by Changing Aspect Ratios and Adding Compensation Resistors
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胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1994 |
Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N20-Annealed Gate Oxides
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胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
| 國立臺灣大學 |
1994 |
Eliminating the Surface Inversion Layer Under the Field Oxide by Low Pressure Rapid Thermal Annealing
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胡振國; Wu, W. L; Lin, J. J.; Hwu, Jenn-Gwo; Wu, W. L; Lin, J. J. |
| 國立臺灣大學 |
1994 |
Improvement in Radiation Hardness of Gate Oxides in Metal-Oxide- Semiconductor Devices by Repeated Rapid Thermal Oxidations in N20
|
胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L. |
顯示項目 101-110 / 210 (共21頁)
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每頁顯示[10|25|50]項目
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