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Institution	Date	Title	Author
臺大學術典藏	1994	Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics	Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C.; 胡振國; Hwu, Jenn-Gwo
臺大學術典藏	1994	Design and Fabrication of Basic Silicon MOS Digital Ciruits	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
臺大學術典藏	1994	Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation	Hwu, Jenn-Gwo; Lu, W. S.; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
臺大學術典藏	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Kuo, K. M.
臺大學術典藏	1994	Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides	Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.
臺大學術典藏	1994	Stable Si MOS Devices with Oxynitride Gate Dielectrics	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
國立臺灣大學	1993	Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters	胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
國立臺灣大學	1993	Electrical Analysis of Wirings in Thin-Film Packaging (I)	胡振國; 吳瑞北; Hwu, Jenn-Gwo; Wu, Ruey-Beei
國立臺灣大學	1993	Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L.
國立臺灣大學	1993	Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments	胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
國立臺灣大學	1993	Radiation Hard Process for Rapid Thermal Reoxidized Nitrided Oxides	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1993	Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides	胡振國; Lee, G. C.; Hwu, Jenn-Gwo; Lee, G. C.
國立臺灣大學	1993	Improvement in Radiation Hardness of Reoxidized Nitrided Oxide (RNO) in the Absence of Post-Oxidation Anneal	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1993	Process Dependency of Radiation Hardness of Rapid Thermal Reoxidized Nitrided Gate Oxides	胡振國; Lu, W. S.; Lin, Kuen-Chyung; Hwu, Jenn-Gwo; Lu, W. S.; Lin, Kuen-Chyung
國立臺灣大學	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L.
臺大學術典藏	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.
臺大學術典藏	1993	Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters	Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
臺大學術典藏	1993	Electrical Analysis of Wirings in Thin-Film Packaging (I)	Hwu, Jenn-Gwo; Wu, Ruey-Beei; Hwu, Jenn-Gwo; Wu, Ruey-Beei
臺大學術典藏	1993	Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings	Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
臺大學術典藏	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
臺大學術典藏	1993	Radiation Hard Process for Rapid Thermal Reoxidized Nitrided Oxides	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
國立臺灣大學	1992	Applications of Rapid Thermal Processing and Radiation Processing on Si Gate Oxides	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1992	Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1992	A Circuit Design for the Improvement of Radiation Hardness in CMOS Digital Circuits	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1992	Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing	胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; Wu, Y. L.
國立臺灣大學	1992	Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides	胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
國立臺灣大學	1992	A Study of the Anneal Technique to Recover the Electrical Characteristics of the Packaged Mental-Oxide Semiconductor Field Effect Transistors Damaged by Co-60 Irradiation	胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S.
國立臺灣大學	1992	Application of Irradiation-Then-Anneal Treatment on the Improvement of Oxide Properties in Metal-Oxide-Semiconductor Capacitors	Lin, J. J.; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo
國立臺灣大學	1992	Dependence of Hot-Carrier and Radiation Hardness of Metal-Oxide-Semiconductor Capacitors on Initital Oxide Resistance Determined by Charge-Then-Decay Method	胡振國; Lin, J. J.; Lin, Kuen-Chyung; Hwu, Jenn-Gwo; Lin, J. J.; Lin, Kuen-Chyung
國立臺灣大學	1992	Effect of Starting Oxide on Electrical Characteristics of Metal- Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes	胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.
國立臺灣大學	1992	Performace Prediction and Function Recovery of CMOS Circuits Damaged by Co-60 Irradiation	胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.
國立臺灣大學	1992	Role of Stree in Irradiation-Then-Anneal Technique Used for Improving Radiation Hardness of Meta-Insulator-Semiconductor Devices.	胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S.
臺大學術典藏	1992	Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides	Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo
臺大學術典藏	1992	Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing	Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; 胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.
臺大學術典藏	1992	Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides	Lu, W. S.; Hwu, Jenn-Gwo; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo
國立臺灣大學	1991	Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments	Chang-Liao, Kuei-Shu; Hwu, Jenn-Gwo
國立臺灣大學	1991	Effect of oxide resistance on the characterization of interface trap density in MOS structures	Lin, Jing-Jenn; Hwu, Jenn-Gwo
國立臺灣大學	1991	Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.	胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J.
國立臺灣大學	1991	Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments	Chang-Liao, K. S.; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo
國立臺灣大學	1991	Radiation Reliability of Devices Used in Optical Fiber Communication	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1991	Studies of the Radiation Hard Fabrication Process of MOS Devices and the Radiation Stability of MOS Circuits	胡振國; Hwu, Jenn-Gwo
臺大學術典藏	1991	Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.	Hwu, Jenn-Gwo; Lin, J. J.; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J.
臺大學術典藏	1991	Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments	Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo
臺大學術典藏	1991	Radiation Reliability of Devices Used in Optical Fiber Communication	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
國立臺灣大學	1990-07	Oxide Resistance Characterization in MOS structures by the Voltage Decay Method	Hwu, Jenn-Gwo; Ho, I-Hsiu
臺大學術典藏	1990-07	Oxide Resistance Characterization in MOS structures by the Voltage Decay Method	Hwu, Jenn-Gwo; Ho, I-Hsiu; Hwu, Jenn-Gwo; Ho, I-Hsiu
國立臺灣大學	1990	Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage technique	Hwu, Jenn-Gwo; Fu, Shyh-Liang
國立臺灣大學	1990	Thin-oxide thickness measurement in ellipsometry by a wafer rotation method	Hwu, Jenn-Gwo; Ho, I.-Hsiu; Chou, Shou-Pin
國立臺灣大學	1990	A Study of the Leakage Property of Thin Gate Oxides	胡振國; Hwu, Jenn-Gwo

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