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機構	日期	題名	作者
臺大學術典藏	1994	Stable Si MOS Devices with Oxynitride Gate Dielectrics	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
國立臺灣大學	1993	Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters	胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
國立臺灣大學	1993	Electrical Analysis of Wirings in Thin-Film Packaging (I)	胡振國; 吳瑞北; Hwu, Jenn-Gwo; Wu, Ruey-Beei
國立臺灣大學	1993	Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L.
國立臺灣大學	1993	Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments	胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
國立臺灣大學	1993	Radiation Hard Process for Rapid Thermal Reoxidized Nitrided Oxides	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1993	Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides	胡振國; Lee, G. C.; Hwu, Jenn-Gwo; Lee, G. C.
國立臺灣大學	1993	Improvement in Radiation Hardness of Reoxidized Nitrided Oxide (RNO) in the Absence of Post-Oxidation Anneal	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1993	Process Dependency of Radiation Hardness of Rapid Thermal Reoxidized Nitrided Gate Oxides	胡振國; Lu, W. S.; Lin, Kuen-Chyung; Hwu, Jenn-Gwo; Lu, W. S.; Lin, Kuen-Chyung
國立臺灣大學	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L.
臺大學術典藏	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.
臺大學術典藏	1993	Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters	Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
臺大學術典藏	1993	Electrical Analysis of Wirings in Thin-Film Packaging (I)	Hwu, Jenn-Gwo; Wu, Ruey-Beei; Hwu, Jenn-Gwo; Wu, Ruey-Beei
臺大學術典藏	1993	Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings	Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
臺大學術典藏	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
臺大學術典藏	1993	Radiation Hard Process for Rapid Thermal Reoxidized Nitrided Oxides	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
國立臺灣大學	1992	Applications of Rapid Thermal Processing and Radiation Processing on Si Gate Oxides	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1992	Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1992	A Circuit Design for the Improvement of Radiation Hardness in CMOS Digital Circuits	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1992	Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing	胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; Wu, Y. L.
國立臺灣大學	1992	Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides	胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
國立臺灣大學	1992	A Study of the Anneal Technique to Recover the Electrical Characteristics of the Packaged Mental-Oxide Semiconductor Field Effect Transistors Damaged by Co-60 Irradiation	胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S.
國立臺灣大學	1992	Application of Irradiation-Then-Anneal Treatment on the Improvement of Oxide Properties in Metal-Oxide-Semiconductor Capacitors	Lin, J. J.; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo
國立臺灣大學	1992	Dependence of Hot-Carrier and Radiation Hardness of Metal-Oxide-Semiconductor Capacitors on Initital Oxide Resistance Determined by Charge-Then-Decay Method	胡振國; Lin, J. J.; Lin, Kuen-Chyung; Hwu, Jenn-Gwo; Lin, J. J.; Lin, Kuen-Chyung

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