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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
臺大學術典藏 1993 Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
臺大學術典藏 1993 Radiation Hard Process for Rapid Thermal Reoxidized Nitrided Oxides Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
國立臺灣大學 1992 Applications of Rapid Thermal Processing and Radiation Processing on Si Gate Oxides 胡振國; Hwu, Jenn-Gwo
國立臺灣大學 1992 Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學 1992 A Circuit Design for the Improvement of Radiation Hardness in CMOS Digital Circuits 胡振國; Hwu, Jenn-Gwo
國立臺灣大學 1992 Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing 胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; Wu, Y. L.
國立臺灣大學 1992 Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides 胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
國立臺灣大學 1992 A Study of the Anneal Technique to Recover the Electrical Characteristics of the Packaged Mental-Oxide Semiconductor Field Effect Transistors Damaged by Co-60 Irradiation 胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S.
國立臺灣大學 1992 Application of Irradiation-Then-Anneal Treatment on the Improvement of Oxide Properties in Metal-Oxide-Semiconductor Capacitors Lin, J. J.; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo
國立臺灣大學 1992 Dependence of Hot-Carrier and Radiation Hardness of Metal-Oxide-Semiconductor Capacitors on Initital Oxide Resistance Determined by Charge-Then-Decay Method 胡振國; Lin, J. J.; Lin, Kuen-Chyung; Hwu, Jenn-Gwo; Lin, J. J.; Lin, Kuen-Chyung
國立臺灣大學 1992 Effect of Starting Oxide on Electrical Characteristics of Metal- Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.
國立臺灣大學 1992 Performace Prediction and Function Recovery of CMOS Circuits Damaged by Co-60 Irradiation 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.
國立臺灣大學 1992 Role of Stree in Irradiation-Then-Anneal Technique Used for Improving Radiation Hardness of Meta-Insulator-Semiconductor Devices. 胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S.
臺大學術典藏 1992 Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo
臺大學術典藏 1992 Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; 胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.
臺大學術典藏 1992 Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides Lu, W. S.; Hwu, Jenn-Gwo; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo
國立臺灣大學 1991 Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments Chang-Liao, Kuei-Shu; Hwu, Jenn-Gwo
國立臺灣大學 1991 Effect of oxide resistance on the characterization of interface trap density in MOS structures Lin, Jing-Jenn; Hwu, Jenn-Gwo
國立臺灣大學 1991 Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments. 胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J.
國立臺灣大學 1991 Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments Chang-Liao, K. S.; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo
國立臺灣大學 1991 Radiation Reliability of Devices Used in Optical Fiber Communication 胡振國; Hwu, Jenn-Gwo
國立臺灣大學 1991 Studies of the Radiation Hard Fabrication Process of MOS Devices and the Radiation Stability of MOS Circuits 胡振國; Hwu, Jenn-Gwo
臺大學術典藏 1991 Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments. Hwu, Jenn-Gwo; Lin, J. J.; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J.
臺大學術典藏 1991 Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo
臺大學術典藏 1991 Radiation Reliability of Devices Used in Optical Fiber Communication Hwu, Jenn-Gwo; Hwu, Jenn-Gwo

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