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Showing items 151-175 of 210  (9 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 1992 Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides Lu, W. S.; Hwu, Jenn-Gwo; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo
國立臺灣大學 1991 Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments Chang-Liao, Kuei-Shu; Hwu, Jenn-Gwo
國立臺灣大學 1991 Effect of oxide resistance on the characterization of interface trap density in MOS structures Lin, Jing-Jenn; Hwu, Jenn-Gwo
國立臺灣大學 1991 Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments. 胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J.
國立臺灣大學 1991 Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments Chang-Liao, K. S.; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo
國立臺灣大學 1991 Radiation Reliability of Devices Used in Optical Fiber Communication 胡振國; Hwu, Jenn-Gwo
國立臺灣大學 1991 Studies of the Radiation Hard Fabrication Process of MOS Devices and the Radiation Stability of MOS Circuits 胡振國; Hwu, Jenn-Gwo
臺大學術典藏 1991 Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments. Hwu, Jenn-Gwo; Lin, J. J.; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J.
臺大學術典藏 1991 Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo
臺大學術典藏 1991 Radiation Reliability of Devices Used in Optical Fiber Communication Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
國立臺灣大學 1990-07 Oxide Resistance Characterization in MOS structures by the Voltage Decay Method Hwu, Jenn-Gwo; Ho, I-Hsiu
臺大學術典藏 1990-07 Oxide Resistance Characterization in MOS structures by the Voltage Decay Method Hwu, Jenn-Gwo; Ho, I-Hsiu; Hwu, Jenn-Gwo; Ho, I-Hsiu
國立臺灣大學 1990 Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage technique Hwu, Jenn-Gwo; Fu, Shyh-Liang
國立臺灣大學 1990 Thin-oxide thickness measurement in ellipsometry by a wafer rotation method Hwu, Jenn-Gwo; Ho, I.-Hsiu; Chou, Shou-Pin
國立臺灣大學 1990 A Study of the Leakage Property of Thin Gate Oxides 胡振國; Hwu, Jenn-Gwo
國立臺灣大學 1990 Characterization Si02 by DC Resistance Measurement Tehcnique 胡振國; Hwu, Jenn-Gwo
國立臺灣大學 1990 Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal Treatments 胡振國; Hwu, Jenn-Gwo
國立臺灣大學 1990 Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.
國立臺灣大學 1990 Electrical Characterization of the Insulating Property of Ta205 in Al-Ta205-Si02-Si Capacitors by a Low-Frequency C/V Technique 胡振國; Lin, S. T.; Hwu, Jenn-Gwo; Lin, S. T.
國立臺灣大學 1990 Improvement of Hot-Electron-Induced Degradation in MOS Capacitors by Repeated Irradiation-Then-Anneal Treatments. 胡振國; Hwu, Jenn-Gwo
國立臺灣大學 1990 Improvement of Oxide Leakage Currents in MOS Structures by Postirradiation Annealing 胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J.
國立臺灣大學 1990 Resistance-Dependence Field Effect on the Radiation Behavor of MOS Capacitors Determined by Instantaneous-Terminal-Voltage Technique 胡振國; Fu, S. L.; Hwu, Jenn-Gwo; Fu, S. L.
國立臺灣大學 1990 Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments 胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J.
國立臺灣大學 1990 Thin Oxide Thickness Measurement in Ellipsometry by a Wafer Rotation Method 胡振國; Ho, I. H.; Chou, S. P.; Hwu, Jenn-Gwo; Ho, I. H.; Chou, S. P.
臺大學術典藏 1990 Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments Lin, J. J.; Hwu, Jenn-Gwo; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo

Showing items 151-175 of 210  (9 Page(s) Totally)
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View [10|25|50] records per page