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教育部委托研究计画 计画执行:国立台湾大学图书馆
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"hwu jenn gwo"的相关文件
显示项目 161-170 / 210 (共21页)
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| 國立臺灣大學 |
1990-07 |
Oxide Resistance Characterization in MOS structures by the Voltage Decay Method
|
Hwu, Jenn-Gwo; Ho, I-Hsiu |
| 臺大學術典藏 |
1990-07 |
Oxide Resistance Characterization in MOS structures by the Voltage Decay Method
|
Hwu, Jenn-Gwo; Ho, I-Hsiu; Hwu, Jenn-Gwo; Ho, I-Hsiu |
| 國立臺灣大學 |
1990 |
Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage technique
|
Hwu, Jenn-Gwo; Fu, Shyh-Liang |
| 國立臺灣大學 |
1990 |
Thin-oxide thickness measurement in ellipsometry by a wafer rotation method
|
Hwu, Jenn-Gwo; Ho, I.-Hsiu; Chou, Shou-Pin |
| 國立臺灣大學 |
1990 |
A Study of the Leakage Property of Thin Gate Oxides
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1990 |
Characterization Si02 by DC Resistance Measurement Tehcnique
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1990 |
Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal Treatments
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1990 |
Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments
|
胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S. |
| 國立臺灣大學 |
1990 |
Electrical Characterization of the Insulating Property of Ta205 in Al-Ta205-Si02-Si Capacitors by a Low-Frequency C/V Technique
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胡振國; Lin, S. T.; Hwu, Jenn-Gwo; Lin, S. T. |
| 國立臺灣大學 |
1990 |
Improvement of Hot-Electron-Induced Degradation in MOS Capacitors by Repeated Irradiation-Then-Anneal Treatments.
|
胡振國; Hwu, Jenn-Gwo |
显示项目 161-170 / 210 (共21页)
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