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Showing items 166-210 of 210 (5 Page(s) Totally)
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Institution	Date	Title	Author
國立臺灣大學	1990	Characterization Si02 by DC Resistance Measurement Tehcnique	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1990	Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal Treatments	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1990	Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments	胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.
國立臺灣大學	1990	Electrical Characterization of the Insulating Property of Ta205 in Al-Ta205-Si02-Si Capacitors by a Low-Frequency C/V Technique	胡振國; Lin, S. T.; Hwu, Jenn-Gwo; Lin, S. T.
國立臺灣大學	1990	Improvement of Hot-Electron-Induced Degradation in MOS Capacitors by Repeated Irradiation-Then-Anneal Treatments.	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1990	Improvement of Oxide Leakage Currents in MOS Structures by Postirradiation Annealing	胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J.
國立臺灣大學	1990	Resistance-Dependence Field Effect on the Radiation Behavor of MOS Capacitors Determined by Instantaneous-Terminal-Voltage Technique	胡振國; Fu, S. L.; Hwu, Jenn-Gwo; Fu, S. L.
國立臺灣大學	1990	Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments	胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J.
國立臺灣大學	1990	Thin Oxide Thickness Measurement in Ellipsometry by a Wafer Rotation Method	胡振國; Ho, I. H.; Chou, S. P.; Hwu, Jenn-Gwo; Ho, I. H.; Chou, S. P.
臺大學術典藏	1990	Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments	Lin, J. J.; Hwu, Jenn-Gwo; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo
臺大學術典藏	1990	A Study of the Leakage Property of Thin Gate Oxides	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
臺大學術典藏	1990	Characterization Si02 by DC Resistance Measurement Tehcnique	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
臺大學術典藏	1990	Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal Treatments	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
臺大學術典藏	1990	Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments	Chang-Liao, K. S.; Hwu, Jenn-Gwo; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo
國立臺灣大學	1989	Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States	胡振國; Lin, J. J.; 王維新; Hwu, Jenn-Gwo; Lin, J. J.; Wang, Way-Seen
國立臺灣大學	1989	Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments	Hwu, Jenn-Gwo; Fu, Shyh-Liang
國立臺灣大學	1989	A Study of the Radiation Effect on Tantalum Oxide Films	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1989	Comparison Between Charge-Temperature and Bias-Temperature Agings	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1989	Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior	胡振國; Lin, S. T.; Hwu, Jenn-Gwo; Lin, S. T.
國立臺灣大學	1989	Flat-Band Annealing Behavior of Co-60 Irradiated Silicon MOS Capacitors	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1989	Constant Bias-Temperature and Constant Charge-Temperature Agings for Silicon Oxide Films of MOS Devices	胡振國; Chuang, J. B.; Fu, S. J.; Hwu, Jenn-Gwo; Chuang, J. B.; Fu, S. J.
臺大學術典藏	1989	A Study of the Radiation Effect on Tantalum Oxide Films	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
臺大學術典藏	1989	Comparison Between Charge-Temperature and Bias-Temperature Agings	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
臺大學術典藏	1989	Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior	Lin, S. T.; Hwu, Jenn-Gwo; 胡振國; Lin, S. T.; Hwu, Jenn-Gwo
臺大學術典藏	1989	Flat-Band Annealing Behavior of Co-60 Irradiated Silicon MOS Capacitors	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
國立臺灣大學	1988	C-V Hysteresis Instability in Aluminum/Tantalum Oxide/Silicon Oxide/ Silicon Capacitors Due to Postmetallization Annealing and Co-60 Irradiation	胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
國立臺灣大學	1988	The Radiation Hardness Property of Dry Oxide Groun by Postoxidation Cooling in Oxygen Ambient	胡振國; Fu, S. S.; Hwu, Jenn-Gwo; Fu, S. S.
國立臺灣大學	1987	Clockwise C-V Hysteresis Phenomena of Metal-Tantalum Oxide-Silicon-Oxide-Silicon(P) Capacitors Due to Leakage Current Through Tantalum Oxide	胡振國; Jeng, M. J.; 王維新; Tu, Y. K.; Hwu, Jenn-Gwo; Jeng, M. J.; Wang, Way-Seen; Tu, Y. K.
國立臺灣大學	1987	Annealing and Radiation Effects on Al/Ta205/Si02/Si Capacitors	胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
國立臺灣大學	1987	Interface Properties of Al/Ta205/Si02/Si (P) Capacitor	胡振國; 王維新; Hwu, Jenn-Gwo; Wang, Way-Seen
國立臺灣大學	1987	Studies of the Radiation-Hardening CMOS Processes	胡振國; 李嗣涔; 王維新; Hwu, Jenn-Gwo; Lee, Si-Chen; Wang, Way-Seen
國立臺灣大學	1987	The Effect of Postoxidation Cooling Ambient on Si02 Property	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1987	Direct Indication of Interface Trap States in a MOS Capacitor from the Peaks of Optical Illumination-Induced Capacitances	胡振國; 王維新; Hwu, Jenn-Gwo; Wang, Way-Seen
臺大學術典藏	1987	Annealing and Radiation Effects on Al/Ta205/Si02/Si Capacitors	Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
臺大學術典藏	1987	Interface Properties of Al/Ta205/Si02/Si (P) Capacitor	Hwu, Jenn-Gwo; Wang, Way-Seen; Hwu, Jenn-Gwo; Wang, Way-Seen
臺大學術典藏	1987	Studies of the Radiation-Hardening CMOS Processes	Hwu, Jenn-Gwo; Lee, Si-Chen; Wang, Way-Seen; Hwu, Jenn-Gwo; Lee, Si-Chen; Wang, Way-Seen
臺大學術典藏	1987	The Effect of Postoxidation Cooling Ambient on Si02 Property	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
國立臺灣大學	1986	Electrical Characteristics of Al/Ta205/Si02/Si(P) MTOS Capacitor	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1986	Direct Indication of Lateral Nonuniformities of MOS Capacitors from the Negative Equivalent Interface Trap Density Based on Charge-Temperature Technique	胡振國; 王維新; Hwu, Jenn-Gwo; Wang, Way-Seen
國立臺灣大學	1986	Relationship Between Mobile Charges and Interface Trap States in Silicon MOS Capacitors	胡振國; 王維新; Chiou, Y. L.; Hwu, Jenn-Gwo; Wang, Way-Seen; Chiou, Y. L.
國立臺灣大學	1986	The Effect of Postoxidation Cooling on Oxygen on the Interface Property of MOS Capacitors	胡振國; Chang, J. J.; 王維新; Hwu, Jenn-Gwo; Chang, J. J.; Wang, Way-Seen
國立臺灣大學	1986	Radiation Effects on the Oxide Properties of Silicon MOS Capacitor	胡振國; Lee, G. S.; Jeng, M. J.; 王維新; 李嗣涔; Hwu, Jenn-Gwo; Lee, G. S.; Jeng, M. J.; Wang, Way-Seen; Lee, Si-Chen
國立臺灣大學	1985	The Effect of Charge-Temperature Aging on n-MOSFET	胡振國; Lin, C. M.; 王維新; Hwu, Jenn-Gwo; Lin, C. M.; Wang, Way-Seen
國立臺灣大學	1983	The Forward Characterization of 50 Amperes Power Rectifier	Chen, M. K.; Chiou, Y. L.; 林浩雄; 胡振國; Chen, M. K.; Chiou, Y. L.; Lin, Hao-Hsiung; Hwu, Jenn-Gwo
國立臺灣大學	1982	Breakdown Voltage of Junction Passivated Power Rectifier	林浩雄; Hwang, C. C.; 胡振國; Chiou, Y. L.; Lin, Hao-Hsiung; Hwang, C. C.; Hwu, Jenn-Gwo; Chiou, Y. L.

Showing items 166-210 of 210 (5 Page(s) Totally)
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