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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"hwu jenn gwo"的相關文件
顯示項目 171-180 / 210 (共21頁)
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| 國立臺灣大學 |
1990 |
Improvement of Oxide Leakage Currents in MOS Structures by Postirradiation Annealing
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胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 國立臺灣大學 |
1990 |
Resistance-Dependence Field Effect on the Radiation Behavor of MOS Capacitors Determined by Instantaneous-Terminal-Voltage Technique
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胡振國; Fu, S. L.; Hwu, Jenn-Gwo; Fu, S. L. |
| 國立臺灣大學 |
1990 |
Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments
|
胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 國立臺灣大學 |
1990 |
Thin Oxide Thickness Measurement in Ellipsometry by a Wafer Rotation Method
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胡振國; Ho, I. H.; Chou, S. P.; Hwu, Jenn-Gwo; Ho, I. H.; Chou, S. P. |
| 臺大學術典藏 |
1990 |
Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments
|
Lin, J. J.; Hwu, Jenn-Gwo; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1990 |
A Study of the Leakage Property of Thin Gate Oxides
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Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1990 |
Characterization Si02 by DC Resistance Measurement Tehcnique
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Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1990 |
Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal Treatments
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Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1990 |
Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments
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Chang-Liao, K. S.; Hwu, Jenn-Gwo; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1989 |
Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States
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胡振國; Lin, J. J.; 王維新; Hwu, Jenn-Gwo; Lin, J. J.; Wang, Way-Seen |
顯示項目 171-180 / 210 (共21頁)
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