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Taiwan Academic Institutional Repository >
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"hwu jenn gwo"
Showing items 176-185 of 210 (21 Page(s) Totally)
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| 臺大學術典藏 |
1990 |
A Study of the Leakage Property of Thin Gate Oxides
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Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1990 |
Characterization Si02 by DC Resistance Measurement Tehcnique
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Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1990 |
Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal Treatments
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Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1990 |
Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments
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Chang-Liao, K. S.; Hwu, Jenn-Gwo; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1989 |
Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States
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胡振國; Lin, J. J.; 王維新; Hwu, Jenn-Gwo; Lin, J. J.; Wang, Way-Seen |
| 國立臺灣大學 |
1989 |
Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments
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Hwu, Jenn-Gwo; Fu, Shyh-Liang |
| 國立臺灣大學 |
1989 |
A Study of the Radiation Effect on Tantalum Oxide Films
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胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1989 |
Comparison Between Charge-Temperature and Bias-Temperature Agings
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胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1989 |
Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior
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胡振國; Lin, S. T.; Hwu, Jenn-Gwo; Lin, S. T. |
| 國立臺灣大學 |
1989 |
Flat-Band Annealing Behavior of Co-60 Irradiated Silicon MOS Capacitors
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胡振國; Hwu, Jenn-Gwo |
Showing items 176-185 of 210 (21 Page(s) Totally)
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