| 國立臺灣大學 |
1989 |
Constant Bias-Temperature and Constant Charge-Temperature Agings for Silicon Oxide Films of MOS Devices
|
胡振國; Chuang, J. B.; Fu, S. J.; Hwu, Jenn-Gwo; Chuang, J. B.; Fu, S. J. |
| 臺大學術典藏 |
1989 |
A Study of the Radiation Effect on Tantalum Oxide Films
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1989 |
Comparison Between Charge-Temperature and Bias-Temperature Agings
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1989 |
Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior
|
Lin, S. T.; Hwu, Jenn-Gwo; 胡振國; Lin, S. T.; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1989 |
Flat-Band Annealing Behavior of Co-60 Irradiated Silicon MOS Capacitors
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1988 |
C-V Hysteresis Instability in Aluminum/Tantalum Oxide/Silicon Oxide/ Silicon Capacitors Due to Postmetallization Annealing and Co-60 Irradiation
|
胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1988 |
The Radiation Hardness Property of Dry Oxide Groun by Postoxidation Cooling in Oxygen Ambient
|
胡振國; Fu, S. S.; Hwu, Jenn-Gwo; Fu, S. S. |
| 國立臺灣大學 |
1987 |
Clockwise C-V Hysteresis Phenomena of Metal-Tantalum Oxide-Silicon-Oxide-Silicon(P) Capacitors Due to Leakage Current Through Tantalum Oxide
|
胡振國; Jeng, M. J.; 王維新; Tu, Y. K.; Hwu, Jenn-Gwo; Jeng, M. J.; Wang, Way-Seen; Tu, Y. K. |
| 國立臺灣大學 |
1987 |
Annealing and Radiation Effects on Al/Ta205/Si02/Si Capacitors
|
胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1987 |
Interface Properties of Al/Ta205/Si02/Si (P) Capacitor
|
胡振國; 王維新; Hwu, Jenn-Gwo; Wang, Way-Seen |
| 國立臺灣大學 |
1987 |
Studies of the Radiation-Hardening CMOS Processes
|
胡振國; 李嗣涔; 王維新; Hwu, Jenn-Gwo; Lee, Si-Chen; Wang, Way-Seen |
| 國立臺灣大學 |
1987 |
The Effect of Postoxidation Cooling Ambient on Si02 Property
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1987 |
Direct Indication of Interface Trap States in a MOS Capacitor from the Peaks of Optical Illumination-Induced Capacitances
|
胡振國; 王維新; Hwu, Jenn-Gwo; Wang, Way-Seen |
| 臺大學術典藏 |
1987 |
Annealing and Radiation Effects on Al/Ta205/Si02/Si Capacitors
|
Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 臺大學術典藏 |
1987 |
Interface Properties of Al/Ta205/Si02/Si (P) Capacitor
|
Hwu, Jenn-Gwo; Wang, Way-Seen; Hwu, Jenn-Gwo; Wang, Way-Seen |
| 臺大學術典藏 |
1987 |
Studies of the Radiation-Hardening CMOS Processes
|
Hwu, Jenn-Gwo; Lee, Si-Chen; Wang, Way-Seen; Hwu, Jenn-Gwo; Lee, Si-Chen; Wang, Way-Seen |
| 臺大學術典藏 |
1987 |
The Effect of Postoxidation Cooling Ambient on Si02 Property
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1986 |
Electrical Characteristics of Al/Ta205/Si02/Si(P) MTOS Capacitor
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1986 |
Direct Indication of Lateral Nonuniformities of MOS Capacitors from the Negative Equivalent Interface Trap Density Based on Charge-Temperature Technique
|
胡振國; 王維新; Hwu, Jenn-Gwo; Wang, Way-Seen |
| 國立臺灣大學 |
1986 |
Relationship Between Mobile Charges and Interface Trap States in Silicon MOS Capacitors
|
胡振國; 王維新; Chiou, Y. L.; Hwu, Jenn-Gwo; Wang, Way-Seen; Chiou, Y. L. |
| 國立臺灣大學 |
1986 |
The Effect of Postoxidation Cooling on Oxygen on the Interface Property of MOS Capacitors
|
胡振國; Chang, J. J.; 王維新; Hwu, Jenn-Gwo; Chang, J. J.; Wang, Way-Seen |
| 國立臺灣大學 |
1986 |
Radiation Effects on the Oxide Properties of Silicon MOS Capacitor
|
胡振國; Lee, G. S.; Jeng, M. J.; 王維新; 李嗣涔; Hwu, Jenn-Gwo; Lee, G. S.; Jeng, M. J.; Wang, Way-Seen; Lee, Si-Chen |
| 國立臺灣大學 |
1985 |
The Effect of Charge-Temperature Aging on n-MOSFET
|
胡振國; Lin, C. M.; 王維新; Hwu, Jenn-Gwo; Lin, C. M.; Wang, Way-Seen |
| 國立臺灣大學 |
1983 |
The Forward Characterization of 50 Amperes Power Rectifier
|
Chen, M. K.; Chiou, Y. L.; 林浩雄; 胡振國; Chen, M. K.; Chiou, Y. L.; Lin, Hao-Hsiung; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1982 |
Breakdown Voltage of Junction Passivated Power Rectifier
|
林浩雄; Hwang, C. C.; 胡振國; Chiou, Y. L.; Lin, Hao-Hsiung; Hwang, C. C.; Hwu, Jenn-Gwo; Chiou, Y. L. |
