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"hwu jenn gwo"的相关文件
显示项目 186-195 / 210 (共21页)
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| 國立臺灣大學 |
1989 |
Constant Bias-Temperature and Constant Charge-Temperature Agings for Silicon Oxide Films of MOS Devices
|
胡振國; Chuang, J. B.; Fu, S. J.; Hwu, Jenn-Gwo; Chuang, J. B.; Fu, S. J. |
| 臺大學術典藏 |
1989 |
A Study of the Radiation Effect on Tantalum Oxide Films
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1989 |
Comparison Between Charge-Temperature and Bias-Temperature Agings
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1989 |
Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior
|
Lin, S. T.; Hwu, Jenn-Gwo; 胡振國; Lin, S. T.; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1989 |
Flat-Band Annealing Behavior of Co-60 Irradiated Silicon MOS Capacitors
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1988 |
C-V Hysteresis Instability in Aluminum/Tantalum Oxide/Silicon Oxide/ Silicon Capacitors Due to Postmetallization Annealing and Co-60 Irradiation
|
胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1988 |
The Radiation Hardness Property of Dry Oxide Groun by Postoxidation Cooling in Oxygen Ambient
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胡振國; Fu, S. S.; Hwu, Jenn-Gwo; Fu, S. S. |
| 國立臺灣大學 |
1987 |
Clockwise C-V Hysteresis Phenomena of Metal-Tantalum Oxide-Silicon-Oxide-Silicon(P) Capacitors Due to Leakage Current Through Tantalum Oxide
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胡振國; Jeng, M. J.; 王維新; Tu, Y. K.; Hwu, Jenn-Gwo; Jeng, M. J.; Wang, Way-Seen; Tu, Y. K. |
| 國立臺灣大學 |
1987 |
Annealing and Radiation Effects on Al/Ta205/Si02/Si Capacitors
|
胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1987 |
Interface Properties of Al/Ta205/Si02/Si (P) Capacitor
|
胡振國; 王維新; Hwu, Jenn-Gwo; Wang, Way-Seen |
显示项目 186-195 / 210 (共21页)
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