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"hwu jenn gwo"的相关文件
显示项目 191-200 / 210 (共21页)
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| 國立臺灣大學 |
1988 |
C-V Hysteresis Instability in Aluminum/Tantalum Oxide/Silicon Oxide/ Silicon Capacitors Due to Postmetallization Annealing and Co-60 Irradiation
|
胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1988 |
The Radiation Hardness Property of Dry Oxide Groun by Postoxidation Cooling in Oxygen Ambient
|
胡振國; Fu, S. S.; Hwu, Jenn-Gwo; Fu, S. S. |
| 國立臺灣大學 |
1987 |
Clockwise C-V Hysteresis Phenomena of Metal-Tantalum Oxide-Silicon-Oxide-Silicon(P) Capacitors Due to Leakage Current Through Tantalum Oxide
|
胡振國; Jeng, M. J.; 王維新; Tu, Y. K.; Hwu, Jenn-Gwo; Jeng, M. J.; Wang, Way-Seen; Tu, Y. K. |
| 國立臺灣大學 |
1987 |
Annealing and Radiation Effects on Al/Ta205/Si02/Si Capacitors
|
胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1987 |
Interface Properties of Al/Ta205/Si02/Si (P) Capacitor
|
胡振國; 王維新; Hwu, Jenn-Gwo; Wang, Way-Seen |
| 國立臺灣大學 |
1987 |
Studies of the Radiation-Hardening CMOS Processes
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胡振國; 李嗣涔; 王維新; Hwu, Jenn-Gwo; Lee, Si-Chen; Wang, Way-Seen |
| 國立臺灣大學 |
1987 |
The Effect of Postoxidation Cooling Ambient on Si02 Property
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1987 |
Direct Indication of Interface Trap States in a MOS Capacitor from the Peaks of Optical Illumination-Induced Capacitances
|
胡振國; 王維新; Hwu, Jenn-Gwo; Wang, Way-Seen |
| 臺大學術典藏 |
1987 |
Annealing and Radiation Effects on Al/Ta205/Si02/Si Capacitors
|
Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 臺大學術典藏 |
1987 |
Interface Properties of Al/Ta205/Si02/Si (P) Capacitor
|
Hwu, Jenn-Gwo; Wang, Way-Seen; Hwu, Jenn-Gwo; Wang, Way-Seen |
显示项目 191-200 / 210 (共21页)
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