| 國立臺灣大學 |
2009 |
Trapping Characteristics of Al2O3/HfO2/SiO2 Stack Structure Prepared by Low Temperature In-situ Oxidation in dc-sputtering
|
Chang, Chia-Hua; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2009 |
Metal–Oxide–Semiconductor Structure Solar Cell Prepared by Low-Temperature (<400°C) Anodization Technique
|
Wang, Chih-Yao; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Effect of strain-temperature stress on MOS structure with ultra-thin gate oxide
|
Lin, Chia-Nan; Yang, Yi-Lin; Chen, Wei-Ting; Lin, Shang-Chih; Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Ultrathin Gate Oxides Prepared by Tensile-Stress Oxidation in Tilted Cathode Anodization System
|
Wang, Chih-Ching; Li, Tsung-Hung; Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Shallow level trap formation in SiO2 induced by high field and thermal stresses
|
Lin, Hao-Peng; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Lateral Nonuniformity Effects of Border Traps on the Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors Subjected to High-Field Stresses
|
Tseng, Jen-Chou; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Silicon Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method
|
Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Effects of electrostatic discharge high-field current impulse on oxide breakdown
|
Tseng, Jen-Chou; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Low temperature (<400 ?C) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation
|
Chiang, Jung-Chin; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Modeling and Characterization of Hydrogen Induced Charge Loss in Nitride Trapping Memory
|
Yang, Yi-Lin; Chang, Chia-Hua; Shih, Yen-Hao; Hsieh, Kuang-Yeu; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Oxide-trapped charges induced by electrostatic discharge impulse stress
|
Tseng, Jen-Chou; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Analysis of Constitution and Characteristics of Lateral Nonuniformity Effects of MOS Devices Using QM-based Terman Method
|
Lin, Hao-Peng; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Reliability of Low Temperature Processing Hafnium Oxide Gate Dielectrics Prepared by Cost-effective Nitric Acid Oxidation (NAO) Technique
|
Chang, Chia-Hua; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Enhancement in Ultrathin Oxide Growth by Thermal-Induced Tensile Stress
|
Hung, Chien-Jui; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Impact of Strain-Temperature Stress on Ultrathin Oxide
|
Tung, Chia-Wei; Yang, Yi-Lin; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Lateral Nonuniformity of Effective Oxide Charges in MOS Capacitors With Al2O3 Gate Dielectrics
|
Huang, Szu-Wei; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Comparison of saturation current characteristics for ultrathin silicon oxides grown on n- and p-type silicon substrates simultaneously
|
Wang, Tsung-Miau; Chang, Chia-Hua; Chang, Shu-Jau; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Improvement in electrical characteristics of high-k Al2O3 gate dielectric by field-assisted nitric oxidation
|
Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Enhancement of Temperature Sensitivity for Metal–Oxide–Semiconductor (MOS) Tunneling Temperature Sensors by Utilizing Hafnium Oxide (HfO2) Film Added on Silicon Dioxide (SiO2)
|
Wang, Tsung-Miau; Chang, Chia-Hua; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Indication of Lateral Nonuniformity of Effective Oxide Charges in High-k Gate Dielectrics by Terman’s Method
|
Hwu, Jenn-Gwo; Huang, Szu-Wei |
| 國立臺灣大學 |
2006 |
Quality Improvement and Electrical characteristics of High-k Films after Receiving Direct Superimposed with Alternative Current Anodic Oxidation (DAC-ANO) Compensation
|
Hwu, Jenn-Gwo; Chang, Chia-Hua; Wang, Tsung-Miau |
| 國立臺灣大學 |
2005 |
The effect of photon illumination in rapid thermal processing on the characteristics of MOS structures with ultra-thin oxides examined by substrate injection
|
Huang, Chia-Hong; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2005 |
Temperature-induced voltage drop rearrangement and its effect on oxide breakdown in metal-oxide-semiconductor capacitor structure
|
Wang, Tsung-Miau; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004-10 |
Quality Improvement of Ultrathin Gate Oxide by Using Thermal Growth Followed by SF ANO Technique
|
Yang, Yi-Lin; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
2004-10 |
Quality Improvement of Ultrathin Gate Oxide by Using Thermal Growth Followed by SF ANO Technique
|
Yang, Yi-Lin; Hwu, Jenn-Gwo; Yang, Yi-Lin; Hwu, Jenn-Gwo |
