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教育部委托研究计画 计画执行:国立台湾大学图书馆
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"hwu jenn gwo"的相关文件
显示项目 51-60 / 210 (共21页)
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| 國立臺灣大學 |
2004 |
Electrical characteristics of ultra-thin gate oxides (<3 nm) prepared by direct current superimposed with alternating-current anodization
|
Chen, Zhi-Hao; Huang, Szu-Wei; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
Quality Improvement in LPCVD Silicon Nitrides by Anodic and Rapid Thermal Oxidations
|
Lin, Yen-Po; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing
|
Kuo, Chih-Sheng; Hsu, Jui-Feng; Huang, Szu-Wei; Lee, Lurng-Shehng; Tsai, Ming-Jinn; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
High Sensitive and Wide Detecting Range MOS Tunneling Temperature Sensors for On-Chip Temperature Detection
|
Shih, Yen-Hao; Lin, Shian-Ru; Wang, Tsung-Miau; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
Growth-Then-Anodization Technique for Reliable Ultrathin Gate Oxides
|
Liao, Wei-Jian; Yang, Yi-Lin; Chuang, Shun-Cheng; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
Ultrathin aluminum oxide gate dielectric on N-type 4H-SiC prepared by low thermal budget nitric acid oxidation
|
Huang, Szu-Wei; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
Suboxide Characteristics in Ultrathin Oxides Grown under Novel Oxidation Processes
|
Lin, Yen-Po; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
Oxide Thickness Dependent Suboxide Width and Its Effect on Inversion Tunneling Current
|
Lin, Yen-Po; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2003 |
Thermal Stress at Wafer Contact Points in Rapid Thermal Processing Investigated by Repeated Spike Treatment before Oxidation
|
Hong, Chao-Chi; Chang, Chang-Yun; Lee, Chaung-Yuan; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2003 |
Thickness-Dependent Stress Effect in P-type Metal-Oxide-Semiconductor Structure Investigated by Substrate Injection Current
|
Hong, Chao-Chi; Liao, Wei-Jian; Hwu, Jenn-Gwo |
显示项目 51-60 / 210 (共21页)
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