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机构	日期	题名	作者
國立臺灣大學	2002	Enhanced thermally induced stress effect on an ultrathin gate oxide	Su, Jiann-Liang; Hong, Chao-Chi; Hwu, Jenn-Gwo
國立臺灣大學	2002	Silicon Metal-Oxide-Semiconductor Solar Cells with Oxide Prepared by Room Temperature Anodization in Hydrofluosilicic Acid Solution	Chen, Chih-Hao; Hong, Chao-Chi; Hwu, Jenn-Gwo
國立臺灣大學	2001-10	Novel ultra thin gate oxide growth technique by alternating current anodization	Hwu, Jenn-Gwo; Lee, Chuang-Yuan; Ting, Chieh-Chih; Chen, Wei-Len
臺大學術典藏	2001-10	Novel ultra thin gate oxide growth technique by alternating current anodization	Hwu, Jenn-Gwo; Lee, Chuang-Yuan; Ting, Chieh-Chih; Chen, Wei-Len; Hwu, Jenn-Gwo; Lee, Chuang-Yuan; Ting, Chieh-Chih; Chen, Wei-Len
國立臺灣大學	2001	Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal	Chen, Yung-Chieh; Lee, Chuang-Yuan; Hwu, Jenn-Gwo
國立臺灣大學	2001	Stress Effect on the Kinetics of Silicon Thermal Oxidation	Yen, Jui-Yuan; Hwu, Jenn-Gwo
國立臺灣大學	2001	Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (~2 nm) after high-field stress	Huang, Chia-Hong; Hwu, Jenn-Gwo
國立臺灣大學	2001	An on-Chip Temperature Sensor by Utilizing a MOS Tunneling Diode	Shih, Yen-Hao; Hwu, Jenn-Gwo
國立臺灣大學	2001	Improvement in oxide thickness uniformity by repeated spikeoxidation	Hong, Chao-Chi; Lee, Chuang-Yuan; Hsieh, Yuan-Long; Liu, Chean-Chung; Fong, I.-K.; Hwu, Jenn-Gwo
國立臺灣大學	2001	Breakdown characteristics of ultrathin gate oxides (<4 nm) in metal–oxide–semiconductor structure subjected to substrate injection	Huang, Chia-Hong; Hwu, Jenn-Gwo
國立臺灣大學	2001	Degradation in Metal-Oxide-Semiconductor Structure with Ultrathin Gate Oxide due to External Compressive Stress	Hong, Chao-Chi; Hwu, Jenn-Gwo
國立臺灣大學	2001	Application of Anodization to Reoxidize Silicon Nitride Film	Lin, Yen-Po; Hwu, Jenn-Gwo
國立臺灣大學	2000	Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing	Huang, Chia-Hong; Hwu, Jenn-Gwo
國立臺灣大學	2000	Enhancement of Silicon Oxidation Rate due to Tensile Mechanical Stress	Yen, Jui-Yuan; Hwu, Jenn-Gwo
國立臺灣大學	1999-08	The Effect of Patterned Susceptor on the Thickness Uniformity of Rapid Thermal Oxides	Lee, Kuo-Chung; Chang, Hong-Yuan; Chang, Hong; Hwu, Jenn-Gwo; Wung, Tzong-Shyan
國立臺灣大學	1999	Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation	Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo
國立臺灣大學	1999	Improvement in the electrical properties of thin gate oxides bychemical-assisted electron stressing followed by annealing (CAESA)	Shih, Yen-Hao; Hwu, Jenn-Gwo
國立臺灣大學	1997-06	Analog maximum, median and minimum circuit	Liu, Shen-Iuan; Chen, Poki; Chen, Chin-Yang; Hwu, Jenn-Gwo
國立臺灣大學	1996	Rapid thermal post-metallization annealing effect on thin gate oxides	Jeng, Ming-Jer; Lin, Huang-Shen; Hwu, Jenn-Gwo
國立臺灣大學	1996	Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics	Lee, Kuo-Chung; Hwu, Jenn-Gwo
國立臺灣大學	1996	Process control of rapid thermal N2O-annealed thin gate oxides	Huang, Yi-Zen; Lu, Wei-Shin; Hwu, Jenn-Gwo
國立臺灣大學	1996	複合式半導體微型壓力感測計之研究(總計畫)	呂學士; 胡振國; 張培仁; Lu, Shey-Shi; Hwu, Jenn-Gwo; Chang, Pei-Zen
國立臺灣大學	1995	Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides	Wu, You-Lin; Wu, Zhao-Yin; Hwu, Jenn-Gwo
國立臺灣大學	1995	Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters	胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
國立臺灣大學	1995	Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides	胡振國; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y.
國立臺灣大學	1995	Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides	胡振國; Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C.
臺大學術典藏	1995	Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters	Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo
國立臺灣大學	1994-10	金氧半元件輻射效應及互補金氧半反相器中元件比之設計考慮	胡振國; 鄭明哲; Hwu, Jenn-Gwo; 鄭明哲
國立臺灣大學	1994	Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment	Lu, W. S.; 胡振國; Chou, J. S.; 李嗣涔; Lu, W. S.; Hwu, Jenn-Gwo; Chou, J. S.; Lee, Si-Chen
國立臺灣大學	1994	Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics	Lee, K. C.; 胡振國; Lee, K. C.; Hwu, Jenn-Gwo
國立臺灣大學	1994	Design and Fabrication of Basic Silicon MOS Digital Ciruits	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1994	Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation	胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
國立臺灣大學	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
國立臺灣大學	1994	Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides	胡振國; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.; Lin, H. S.
國立臺灣大學	1994	Stable Si MOS Devices with Oxynitride Gate Dielectrics	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1994	Characterization of Metal-Oxide-Semiconductor Capacitors with Improved Gate Oxides Prepared by Repeated Rapid Thermal Annealings in N20	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Design of Radiation Hard CMOS Circuits by Changing Aspect Ratios and Adding Compensation Resistors	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N20-Annealed Gate Oxides	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Eliminating the Surface Inversion Layer Under the Field Oxide by Low Pressure Rapid Thermal Annealing	胡振國; Wu, W. L; Lin, J. J.; Hwu, Jenn-Gwo; Wu, W. L; Lin, J. J.
國立臺灣大學	1994	Improvement in Radiation Hardness of Gate Oxides in Metal-Oxide- Semiconductor Devices by Repeated Rapid Thermal Oxidations in N20	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Improvement of Hot-Carrier and Radiation Hardnesses in Metal-Oxide- Nitride-Oxide-Semiconductor Devices by Irradiation-Then-Anneal Treatments.	胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S.
國立臺灣大學	1994	Reduction of Radiation-Induced Degradation in N-Channel Metal-Oxide- Semiconductor Field-Effect Transistors (MOSFET's) with Gate Oxides Prepared by Repeated Rapid Thermal N20 Annealing	胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
國立臺灣大學	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
臺大學術典藏	1994	Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment	Hwu, Jenn-Gwo; Lee, Si-Chen; Lu, W. S.; Chou, J. S.; Lu, W. S.; 胡振國; Chou, J. S.; 李嗣涔; Hwu, Jenn-Gwo; Lee, Si-Chen
臺大學術典藏	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
臺大學術典藏	1994	Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics	Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C.; 胡振國; Hwu, Jenn-Gwo
臺大學術典藏	1994	Design and Fabrication of Basic Silicon MOS Digital Ciruits	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
臺大學術典藏	1994	Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation	Hwu, Jenn-Gwo; Lu, W. S.; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
臺大學術典藏	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Kuo, K. M.
臺大學術典藏	1994	Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides	Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.

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