臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

About TAIR
	About TAIR

Browse By
	Institution
	Author
	Title
	Date
	Statistics Chart
	Institution Facts
	Trend

News
	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

Copyright
	Publisher & Journal Policy
	TAIR Copyright Conference Minutes

Related Links
	機構典藏計畫網站
	ROAR
	OpenDOAR
	SHERPA
	OAIster
	JAIRO
	Ira
	DSPACE
	RWWR
	臺大學術典藏NTU Scholars

"hwu jenn gwo"

Return to Browse by Author
Sorting by Title	Sort by Date

Showing items 76-125 of 210 (5 Page(s) Totally)
<< < 1 2 3 4 5 > >>
View [10|25|50] records per page

Institution	Date	Title	Author
國立臺灣大學	2001	Stress Effect on the Kinetics of Silicon Thermal Oxidation	Yen, Jui-Yuan; Hwu, Jenn-Gwo
國立臺灣大學	2001	Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (~2 nm) after high-field stress	Huang, Chia-Hong; Hwu, Jenn-Gwo
國立臺灣大學	2001	An on-Chip Temperature Sensor by Utilizing a MOS Tunneling Diode	Shih, Yen-Hao; Hwu, Jenn-Gwo
國立臺灣大學	2001	Improvement in oxide thickness uniformity by repeated spikeoxidation	Hong, Chao-Chi; Lee, Chuang-Yuan; Hsieh, Yuan-Long; Liu, Chean-Chung; Fong, I.-K.; Hwu, Jenn-Gwo
國立臺灣大學	2001	Breakdown characteristics of ultrathin gate oxides (<4 nm) in metal–oxide–semiconductor structure subjected to substrate injection	Huang, Chia-Hong; Hwu, Jenn-Gwo
國立臺灣大學	2001	Degradation in Metal-Oxide-Semiconductor Structure with Ultrathin Gate Oxide due to External Compressive Stress	Hong, Chao-Chi; Hwu, Jenn-Gwo
國立臺灣大學	2001	Application of Anodization to Reoxidize Silicon Nitride Film	Lin, Yen-Po; Hwu, Jenn-Gwo
國立臺灣大學	2000	Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing	Huang, Chia-Hong; Hwu, Jenn-Gwo
國立臺灣大學	2000	Enhancement of Silicon Oxidation Rate due to Tensile Mechanical Stress	Yen, Jui-Yuan; Hwu, Jenn-Gwo
國立臺灣大學	1999-08	The Effect of Patterned Susceptor on the Thickness Uniformity of Rapid Thermal Oxides	Lee, Kuo-Chung; Chang, Hong-Yuan; Chang, Hong; Hwu, Jenn-Gwo; Wung, Tzong-Shyan
國立臺灣大學	1999	Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation	Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo
國立臺灣大學	1999	Improvement in the electrical properties of thin gate oxides bychemical-assisted electron stressing followed by annealing (CAESA)	Shih, Yen-Hao; Hwu, Jenn-Gwo
國立臺灣大學	1997-06	Analog maximum, median and minimum circuit	Liu, Shen-Iuan; Chen, Poki; Chen, Chin-Yang; Hwu, Jenn-Gwo
國立臺灣大學	1996	Rapid thermal post-metallization annealing effect on thin gate oxides	Jeng, Ming-Jer; Lin, Huang-Shen; Hwu, Jenn-Gwo
國立臺灣大學	1996	Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics	Lee, Kuo-Chung; Hwu, Jenn-Gwo
國立臺灣大學	1996	Process control of rapid thermal N2O-annealed thin gate oxides	Huang, Yi-Zen; Lu, Wei-Shin; Hwu, Jenn-Gwo
國立臺灣大學	1996	複合式半導體微型壓力感測計之研究(總計畫)	呂學士; 胡振國; 張培仁; Lu, Shey-Shi; Hwu, Jenn-Gwo; Chang, Pei-Zen
國立臺灣大學	1995	Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides	Wu, You-Lin; Wu, Zhao-Yin; Hwu, Jenn-Gwo
國立臺灣大學	1995	Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters	胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
國立臺灣大學	1995	Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides	胡振國; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y.
國立臺灣大學	1995	Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides	胡振國; Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C.
臺大學術典藏	1995	Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters	Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo
國立臺灣大學	1994-10	金氧半元件輻射效應及互補金氧半反相器中元件比之設計考慮	胡振國; 鄭明哲; Hwu, Jenn-Gwo; 鄭明哲
國立臺灣大學	1994	Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment	Lu, W. S.; 胡振國; Chou, J. S.; 李嗣涔; Lu, W. S.; Hwu, Jenn-Gwo; Chou, J. S.; Lee, Si-Chen
國立臺灣大學	1994	Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics	Lee, K. C.; 胡振國; Lee, K. C.; Hwu, Jenn-Gwo
國立臺灣大學	1994	Design and Fabrication of Basic Silicon MOS Digital Ciruits	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1994	Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation	胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
國立臺灣大學	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
國立臺灣大學	1994	Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides	胡振國; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.; Lin, H. S.
國立臺灣大學	1994	Stable Si MOS Devices with Oxynitride Gate Dielectrics	胡振國; Hwu, Jenn-Gwo
國立臺灣大學	1994	Characterization of Metal-Oxide-Semiconductor Capacitors with Improved Gate Oxides Prepared by Repeated Rapid Thermal Annealings in N20	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Design of Radiation Hard CMOS Circuits by Changing Aspect Ratios and Adding Compensation Resistors	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Effect of Starting Oxide Preparation on Electrical Properties of Reoxidized Nitrided and N20-Annealed Gate Oxides	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Eliminating the Surface Inversion Layer Under the Field Oxide by Low Pressure Rapid Thermal Annealing	胡振國; Wu, W. L; Lin, J. J.; Hwu, Jenn-Gwo; Wu, W. L; Lin, J. J.
國立臺灣大學	1994	Improvement in Radiation Hardness of Gate Oxides in Metal-Oxide- Semiconductor Devices by Repeated Rapid Thermal Oxidations in N20	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1994	Improvement of Hot-Carrier and Radiation Hardnesses in Metal-Oxide- Nitride-Oxide-Semiconductor Devices by Irradiation-Then-Anneal Treatments.	胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S.
國立臺灣大學	1994	Reduction of Radiation-Induced Degradation in N-Channel Metal-Oxide- Semiconductor Field-Effect Transistors (MOSFET's) with Gate Oxides Prepared by Repeated Rapid Thermal N20 Annealing	胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
國立臺灣大學	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
臺大學術典藏	1994	Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment	Hwu, Jenn-Gwo; Lee, Si-Chen; Lu, W. S.; Chou, J. S.; Lu, W. S.; 胡振國; Chou, J. S.; 李嗣涔; Hwu, Jenn-Gwo; Lee, Si-Chen
臺大學術典藏	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.
臺大學術典藏	1994	Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics	Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C.; 胡振國; Hwu, Jenn-Gwo
臺大學術典藏	1994	Design and Fabrication of Basic Silicon MOS Digital Ciruits	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
臺大學術典藏	1994	Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation	Hwu, Jenn-Gwo; Lu, W. S.; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S.
臺大學術典藏	1994	Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings	Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Kuo, K. M.
臺大學術典藏	1994	Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides	Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.
臺大學術典藏	1994	Stable Si MOS Devices with Oxynitride Gate Dielectrics	Hwu, Jenn-Gwo; Hwu, Jenn-Gwo
國立臺灣大學	1993	Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters	胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J.
國立臺灣大學	1993	Electrical Analysis of Wirings in Thin-Film Packaging (I)	胡振國; 吳瑞北; Hwu, Jenn-Gwo; Wu, Ruey-Beei
國立臺灣大學	1993	Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings	胡振國; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Y. L.
國立臺灣大學	1993	Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer	胡振國; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo; Wu, Z. Y.; Wu, Y. L.

Showing items 76-125 of 210 (5 Page(s) Totally)
<< < 1 2 3 4 5 > >>
View [10|25|50] records per page

	English \| 正體中文 \| 简体中文 \| Total items :0
	Visitors : 50687799 Online Users : 256 Project Commissioned by the Ministry of Education Project Executed by National Taiwan University Library