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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"hwu jenn gwo"的相關文件
顯示項目 81-90 / 210 (共21頁)
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| 國立臺灣大學 |
2001 |
Degradation in Metal-Oxide-Semiconductor Structure with Ultrathin Gate Oxide due to External Compressive Stress
|
Hong, Chao-Chi; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2001 |
Application of Anodization to Reoxidize Silicon Nitride Film
|
Lin, Yen-Po; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2000 |
Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing
|
Huang, Chia-Hong; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2000 |
Enhancement of Silicon Oxidation Rate due to Tensile Mechanical Stress
|
Yen, Jui-Yuan; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1999-08 |
The Effect of Patterned Susceptor on the Thickness Uniformity of Rapid Thermal Oxides
|
Lee, Kuo-Chung; Chang, Hong-Yuan; Chang, Hong; Hwu, Jenn-Gwo; Wung, Tzong-Shyan |
| 國立臺灣大學 |
1999 |
Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation
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Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1999 |
Improvement in the electrical properties of thin gate oxides bychemical-assisted electron stressing followed by annealing (CAESA)
|
Shih, Yen-Hao; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1997-06 |
Analog maximum, median and minimum circuit
|
Liu, Shen-Iuan; Chen, Poki; Chen, Chin-Yang; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1996 |
Rapid thermal post-metallization annealing effect on thin gate oxides
|
Jeng, Ming-Jer; Lin, Huang-Shen; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1996 |
Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics
|
Lee, Kuo-Chung; Hwu, Jenn-Gwo |
顯示項目 81-90 / 210 (共21頁)
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