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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"hwu jenn gwo"的相關文件
顯示項目 86-95 / 210 (共21頁)
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| 國立臺灣大學 |
1999 |
Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation
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Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1999 |
Improvement in the electrical properties of thin gate oxides bychemical-assisted electron stressing followed by annealing (CAESA)
|
Shih, Yen-Hao; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1997-06 |
Analog maximum, median and minimum circuit
|
Liu, Shen-Iuan; Chen, Poki; Chen, Chin-Yang; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1996 |
Rapid thermal post-metallization annealing effect on thin gate oxides
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Jeng, Ming-Jer; Lin, Huang-Shen; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1996 |
Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics
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Lee, Kuo-Chung; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1996 |
Process control of rapid thermal N2O-annealed thin gate oxides
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Huang, Yi-Zen; Lu, Wei-Shin; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1996 |
複合式半導體微型壓力感測計之研究(總計畫)
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呂學士; 胡振國; 張培仁; Lu, Shey-Shi; Hwu, Jenn-Gwo; Chang, Pei-Zen |
| 國立臺灣大學 |
1995 |
Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides
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Wu, You-Lin; Wu, Zhao-Yin; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1995 |
Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters
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胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1995 |
Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides
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胡振國; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y. |
顯示項目 86-95 / 210 (共21頁)
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