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Institution Date Title Author
國立中山大學 2003 Self-assembled vertical GaN nanorods grown by molecular beam epitaxy L.W. Tu;C.L. Hsiao;T.W. Chi;Ikai Lo;K.Y. Hsieh
國立中山大學 2003 Vertical hexagonal GaN nanorods grown on (111)Si substrate Ching-Lien Hsiao;Li-Wei Tu;T.W. Chi;Jamafon J. Wu;Kuang-Yu Hsieh;Ikai Lo
國立中山大學 2003 Second subband population of the two-dimensional electron gas in strongly coupled GaAs/Al0.3Ga0.7As double quantum wells Ikai Lo;J.K. Tsai;P.C. Ho;W.J. Yao;C.H. Chang;Jih-Chen Chiang;Li-Wei Tu;Q.X. Zhao
國立中山大學 2002 Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures Ikai Lo;J.K. Tsai;W.J. Yao;P.C. Ho;Li-Wei Tu;T.C. Chang;S. Elhamri;W.C. Mitchel;K.Y. Hsieh;J.H. Huang;H.L. Huang;W.C. Tsai
國立中山大學 2002 Plasma assisted MBE growth and characterizations of GaN Li-Wei Tu;K.H. Lee;C.M. Lai;M.K. Hsu;W.S. Chen;C.S. Liu;Ikai Lo;J.K. Tsai;P.C. Ho;K.Y. Hsieh;C.H. Huang;Y.L. Shen
國立中山大學 2002 Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures Ikai Lo;J.K. Tsai;Li-Wei Tu;K.Y. Hsieh;C.S. Liu;J.H. Huang;S. Elhamri;W.C. Mitchel;J.K. Sheu
國立中山大學 2002 Landau-level mixing effect in Ga1-xAlxAs/GaAs/Ga1-xAlxAs double-barrier resonant tunneling structures Jih-Chen Chiang;I-Min Jiang;Ikai Lo;Li-Wei Tu
國立中山大學 2002 Landau-level mixing effect in Ga1-xAlxAs-GaAs-Ga1-xAlxAs double-barrier Resonant tunneling structures Jih-Chen Chiang;I-Min Jiang;Ikai Lo;Li-Wei Tu
國立中山大學 2002 Wide bandgap semiconductor materials for device application using in space Ikai Lo;Li-Wei Tu;J.K. Tsai
國立中山大學 2002 Characteristics of GaN grown by RF-plasma enhanced molecular beam epitaxy L.M. Lai;K.H. Lee;W.S. Chen;C.S. Liu;Li-Wei Tu;Ikai Lo;C.H. Huang;Y.L. Shen;K.Y. Hsieh

Showing items 31-40 of 144  (15 Page(s) Totally)
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