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Institution Date Title Author
臺大學術典藏 2018-09-10T09:44:56Z Unintentional annealing of the active layer in the growth of InGaN/GaN quantum well light-emitting diode structures Mickevi?ius, J.;Dobrovolskas, D.;?imonyte, I.;Tamulaitis, G.;Chen, C.-Y.;Liao, C.-H.;Chen, H.-S.;Yang, C.C.; Mickevi?ius, J.; Dobrovolskas, D.; ?imonyte, I.; Tamulaitis, G.; Chen, C.-Y.; Liao, C.-H.; Chen, H.-S.; Yang, C.C.; CHIH-CHUNG YANG
臺大學術典藏 2018-09-10T09:44:56Z Unintentional annealing of the active layer in the growth of InGaN/GaN quantum well light-emitting diode structures Mickevi?ius, J.;Dobrovolskas, D.;?imonyte, I.;Tamulaitis, G.;Chen, C.-Y.;Liao, C.-H.;Chen, H.-S.;Yang, C.C.; Mickevi?ius, J.; Dobrovolskas, D.; ?imonyte, I.; Tamulaitis, G.; Chen, C.-Y.; Liao, C.-H.; Chen, H.-S.; Yang, C.C.; CHIH-CHUNG YANG

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