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| 臺大學術典藏 |
2020-03-02T07:40:12Z |
Band gap engineering of chemical vapor deposited graphene by in situ BN doping
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Chang, C.-K.; Kataria, S.; Kuo, C.-C.; Ganguly, A.; Wang, B.-Y.; Hwang, J.-Y.; Huang, K.-J.; Yang, W.-H.; Wang, S.-B.; Chuang, C.-H.; Chen, M.; Huang, C.-I.; Pong, W.-F.; Song, K.-J.; Chang, S.-J.; Guo, J.-H.; Tai, Y.; Tsujimoto, M.; Isoda, S.; Chen, C.-W.; Chen, L.-C.; Chen, K.-H.; CHING-I HUANG |
| 國立臺灣科技大學 |
2013 |
Band gap engineering of chemical vapor deposited graphene by in situ BN doping
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Chang, C.-K.;Kataria, S.;Kuo, C.-C.;Ganguly, A.;Wang, B.-Y.;Hwang, J.-Y.;Huang, K.-J.;Yang, W.-H.;Wang, S.-B.;Chuang, C.-H.;Chen, M.;Huang, C.-I.;Pong, W.-F.;Song, K.-J.;Chang, S.-J.;Guo, J.-H.;Tai, Y.;Tsujimoto, M.;Isoda, S.;Chen, C.-W.;Chen, L.-C.;Chen, K.-H. |
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