|
|
???tair.name??? >
???browser.page.title.author???
|
"iwai h"???jsp.browse.items-by-author.description???
Showing items 1-12 of 12 (1 Page(s) Totally)
1
View [10|25|50] records per page
| 國立交通大學 |
2019-06-03T01:09:17Z |
First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack
|
Luc, Q. H.; Fan-Chiang, C. C.; Huynh, S. H.; Huang, P.; Do, H. B.; Ha, M. T. H.; Jin, Y. D.; Nguyen, T. A.; Zhang, K. Y.; Wang, H. C.; Lin, Y. K.; Lin, Y. C.; Hu, C.; Iwai, H.; Chang, E. Y. |
| 國立交通大學 |
2019-04-02T05:58:59Z |
Improving electrical characteristics of W/HfO2/In0.53Ga0.47As gate stacks by altering deposition techniques
|
Zade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H. |
| 國立交通大學 |
2019-04-02T05:58:46Z |
Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
|
Trinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H. |
| 國立交通大學 |
2018-08-21T05:56:52Z |
Dielectrics for MOS Integrated Circuits
|
Iwai, H. |
| 國立交通大學 |
2018-08-21T05:56:32Z |
Annealing Effect on the Electrical Properties of La2O3/InGaAs MOS Capacitors
|
Kanda, T.; Zade, D.; Lin, Y. -C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H. |
| 國立交通大學 |
2017-04-21T06:49:32Z |
Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure
|
Funamiz, K.; Lin, Y. C.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Sugii, N.; Chang, E. Y.; Hattori, T.; Iwai, H. |
| 國立交通大學 |
2017-04-21T06:49:24Z |
Optimization of gate insulator material for GaN MIS-HEMT
|
Lin, Y. C.; Lin, T. W.; Wu, C. H.; Yao, J. N.; Hsu, H. T.; Shih, W. C.; Kakushima, K.; Tsutsui, K.; Iwai, H.; Chang, E. Y. |
| 國立交通大學 |
2017-04-21T06:49:22Z |
Evaluation of GaN HEMT with Field Plate for Reliability Improvement
|
Lin, Y. C.; Lin, J. C.; Lin, Y.; Wu, C. H.; Chin, P. C.; Hsu, H. T.; Hsieh, T. E.; Iwai, H.; Chang, E. Y. |
| 國立交通大學 |
2017-04-21T06:49:22Z |
Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate Insulator
|
Lin, Y. C.; Lin, J. C.; Lin, Y.; Wu, C. H.; Huang, Y. X.; Liu, S. C.; Hsu, H. T.; Hsieh, T. E.; Kakushima, K.; Iwai, H.; Chang, E. Y. |
| 國立交通大學 |
2014-12-08T15:43:26Z |
Improving electrical characteristics of W/HfO(2)/In(0.53)Ga(0.47)As gate stacks by altering deposition techniques
|
Zade, D.; Kakushima, K.; Kanda, T.; Lin, Y. C.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Chang, E. Y.; Natori, K.; Hattori, T.; Iwai, H. |
| 國立交通大學 |
2014-12-08T15:33:42Z |
Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
|
Trinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H. |
| 國立交通大學 |
2014-12-08T15:29:06Z |
Effect of Thermal Treatments on HfO2/In0.7Ga0.3As Metal-Oxide-Semiconductor Capacitor Characteristics
|
Chang, Chia-Hua; Shie, Tin-En; Lin, Yueh-Chin; Kakushima, K.; Iwai, H.; Lu, Po-Ching; Lin, Ting-Chun; Huang, Guan Ning; Chang, Edward Yi |
Showing items 1-12 of 12 (1 Page(s) Totally)
1
View [10|25|50] records per page
|
