臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

	English \| 正體中文 \| 简体中文 \| Total items :0
	Visitors : 50685998 Online Users : 255 Project Commissioned by the Ministry of Education Project Executed by National Taiwan University Library

Scope

Adv. Search

Login

Administrator

臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

About TAIR
	About TAIR

Browse By
	Institution
	Author
	Title
	Date
	Statistics Chart
	Institution Facts
	Trend

News
	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

Copyright
	Publisher & Journal Policy
	TAIR Copyright Conference Minutes

Related Links
	機構典藏計畫網站
	ROAR
	OpenDOAR
	SHERPA
	OAIster
	JAIRO
	Ira
	DSPACE
	RWWR
	臺大學術典藏NTU Scholars

"j b kuo"

Return to Browse by Author
Sorting by Title	Sort by Date

Showing items 86-95 of 176 (18 Page(s) Totally)
<< < 4 5 6 7 8 9 10 11 12 13 > >>
View [10|25|50] records per page

Institution	Date	Title	Author
臺大學術典藏	2018-09-10T07:41:37Z	Design Optimization of Low-Power 90nm CMOS SOC Applications Using 0.5V Bulk PMOS Dynamic-Threshold with Dual Threshold (MTCMOS) BP-DTMOS-DT Technique	C. H. Lin;J. B. Kuo; C. H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Modeling the Floating-Body-Effect-Induced Drain Current Behavior of PD SOI NMOS Device Via SPICE BJT/MOS Model Approach	J. S. Su;J. B. Kuo; J. S. Su; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Modeling the Floating-Body-Effect-Induced Drain Current Behavior of PD SOI NMOS Device Via SPICE BJT/MOS Model Approach	J. S. Su;J. B. Kuo; J. S. Su; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Temperature-Dependent Kink Effect Model for Partially-Depleted SOI NMOS Devices	S. C Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Bandgap Narrowing	J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Closed-Form Partitioned Gate Tunneling Current Model for NMOS Devices with an Ultra-thin Gate Oxide	C. H. Lin;J. B. Kuo; C. H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Closed-Form Partitioned Gate Tunneling Current Model for NMOS Devices with an Ultra-thin Gate Oxide	C. H. Lin;J. B. Kuo; C. H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Compact MOS/Bipolar Charge-Control Model of Partially-Depleted SOI CMOS Devices for VLSI Circuit Simulation---SOI-Technology (ST)-SPICE	J. B. Kuo; K. W. Su; S. C. Lin; JAMES-B KUO

Showing items 86-95 of 176 (18 Page(s) Totally)
<< < 4 5 6 7 8 9 10 11 12 13 > >>
View [10|25|50] records per page